MOSFET NS150N-0045T TO247-3L

2 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

650V Super-GaN FET in TO 247 P/N: YZPST-RGN65C035

Features

Easy to drive—compatible with standard gate drivers

Low conduction and switching losses

Low Qrr of 175nC—no free-wheeling diode required

GSD pin layout improves high speed design

JEDEC-qualified GaN technology

RoHS compliant and Halogen-free

Benefits

Increased efficiency through fast switching

Increased power density

Reduced system size and weight

Enables more efficient topologies—easy to implement bridgeless totem-pole designs

Lower BOM cost

Applications

Renewable energy

Industrial

Automotive

Telecom and datacom

Servo motors

Absolute Maximum Ratings (TC=25°C unless otherwise stated)

Symbol	Parameter	Limit Value	Unit
ID25°C	Continuous drain current @TC=25 °C a	50	A
ID100°C	Continuous drain current @TC=100 °C a	31.5	A
IDM	Pulsed drain current (pulse width: 10µs)	240	A
VDSS	Drain to source voltage	650	V
VTDS	Transient drain to source voltage b	800	V
VGSS	Gate to source voltage	±18	V
PD25 °C	Maximum power dissipation	178	W
TJ	Operating junction temperature	-55 to +150	°C
TS	Storage temperature	-55 to +150	°C
TCSOLD	Soldering peak temperature c	260	°C

Thermal Resistance

Symbol	Parameter	Typical	Unit
RΘJC	Junction-to-case	0.7	°C/W
RΘJA	Junction-to-ambient	40	°C/W

Test Circuits and Waveforms

Mechanical

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YANGZHOU POSITIONING TECH CO., LTD.

Audited supplier

8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor , Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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