YZPST-RGN700C29D8
2 month ago
Key performance parameters at Tj = 25 °C
|
Parameter |
Value |
Unit |
|
VDS,max |
700 |
V |
|
RDS(on),max @ VGS = 6 V |
80 |
mΩ |
|
QG,typ @ VDS = 400 V |
6.2 |
nC |
|
ID,pulse |
58 |
A |
|
QOSS @ VDS = 400 V |
60 |
nC |
|
Qrr @ VDS = 400 V |
0 |
nC |
Maximum ratings at Tj = 25 °C unless otherwise specified
|
Parameter |
Symbol |
Values |
Unit |
Note/Test Condition |
|
Drain source voltage |
VDS,max |
700 |
V |
VGS = 0 V, Tj = -55 °C to 150 °C |
|
Drain source voltage transient 1 |
VDS,transient |
800 |
V |
VGS = 0 V |
|
Drain source voltage, pulsed 2 |
VDS,pulse |
750 |
V |
Tj = 25 °C; total time < 10 h |
|
Tj = 125 °C; total time < 1 h |
||||
|
Continuous current, drain source |
ID |
29 |
A |
Tc = 25 °C |
|
Pulsed current, drain source 3 |
ID,pulse |
58 |
A |
Tc = 25 °C; VGS = 6 V; tPULSE = 10 µs |
|
Pulsed current, drain source 3 |
ID,pulse |
29 |
A |
Tc = 125 °C; VGS = 6 V; tPULSE = 10 µs |
|
Gate source voltage, continuous |
VGS |
-6 to +7 |
V |
Tj = -55 °C to 150 °C |
|
Gate source voltage, pulsed |
VGS,pulse |
-20 to +10 |
V |
Tj = -55 °C to 150 °C; tPULSE = 50 ns, f = 100 kHz; open drain |
|
Power dissipation |
Ptot |
188 |
W |
Tc = 25 °C |
|
Operating temperature |
Tj |
-55 to +150 |
。C |
|
|
Storage temperature |
Tstg |
-55 to +150 |
。C |
|
Package outlines
Similar Video Recommendation
You May Also Like
If you are interested in the product, contact Bossgoovideo.com for more information
- *To:
- YANGZHOU POSITIONING TECH CO., LTD.
- *Message:
-
Submit
Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module ,
Power Diode,
Silicon Transistor,
Bridge Rectifier
You May Also Like