YZPST-RGN800C05D5

2 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

P/N:YZPST-RGN800C05D5 Super GaN

800V 9A 480mΩ Super GaN in DFN 5X6 Datasheet

Features

Enhancement mode transistor-Normally off power switch

Ultra high switching frequency No reverse-recovery charge

Low gate charge, low output charge

Qualified for industrial applications according to JEDEC Standards ESD safeguard

RoHS, Pb-free, REACH-compliant

Applications

AC-DC converters

DC-DC converters

Totem pole PFC

Fast battery charging

High density power conversion

High efficiency power conversion

Pin information

Gate	Drain	Kelvin Source	Source
8	1, 2, 3, 4	7	5, 6, 9

Key performance parameters at Tj = 25 °C

Parameter	Value	Unit
VDS,max	800	V
RDS(on),max @ VGS = 6 V	480	mΩ
QG,typ @ VDS = 400 V	1.3	nC
ID,pulse	9	A
QOSS @ VDS = 400 V	10.5	nC
Qrr @ VDS = 400 V	0	nC

Maximum ratings at Tj = 25 °C unless otherwise specified.

Parameter	Symbol	Values	Unit	Note/Test Condition
Drain source voltage	VDS, max	800	V	VGS = 0 V, Tj = -55 °C to 150 °C
Drain source voltage transient 1	VDS, transient	800	V	VGS = 0 V
Drain source voltage, pulsed 2	VDS, pulse	750	V	Tj = 25 °C; total time < 10 h
Drain source voltage, pulsed 2	VDS, pulse	750	V	Tj = 125 °C; total time < 1 h
Continuous current, drain source	ID	5	A	Tc = 25 °C
Pulsed current, drain source 3	ID, pulse	9	A	Tc = 25 °C; VGS = 6 V; tPULSE = 10 µs
Pulsed current, drain source 3	ID, pulse	5	A	Tc = 125 °C; VGS = 6 V; tPULSE = 10 µs
Gate source voltage, continuous 4	VGS	-1.4 to +7	V	Tj = -55 °C to 150 °C
Gate source voltage, pulsed	VGS, pulse	-20 to +10	V	Tj = -55 °C to 150 °C; tPULSE = 50 ns, f = 100 kHz; open drain
Power dissipation	Ptot	40	W	Tc = 25 °C
Operating temperature	Tj	-55 to +150	。C
Storage temperature	Tstg	-55 to +150	。C

Package outlines

Recommended PCB footprint

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YANGZHOU POSITIONING TECH CO., LTD.

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Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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