IDW20G120C5BFKSA1

4 week ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)

SiC Schottky Diode

Features

Zero Forward Recovery Voltage

Zero Reverse Recovery Current

Excellent Surge Current Capability

Temperature Independent Switching

Positive Temperature Coefficient on VF

High Frequency Operation

Benefits

Increased Power Density

Essentially no Switching Losses

Reduction of Heat Sink Requirements

Higher Efficiency

Reduced EMI

Applications

Uninterruptible Power Supplies

Switch Mode Power Supplies

Power Factor Correction

Motor Drivers

Maximum ratings (Tj=25℃ unless otherwise specified)

Symbol	Parameter	Test conditions	Value	Unit
VRRM	Repetitive peak reverse voltage		1200	V
VRSM	Surge peak reverse voltage		1200	V
IF	Continuous forward current	TC=25°C TC=155°C	35/70* 10/20*	A
IFSM	Non-Repetitive forward surge current	TC=25°C , tp=10ms, Half Sine Wave	105*	A
IFRM	Repetitive Peak Forward Surge Current	TC=25°C , tp=10ms, Half Sine Wave	60*	A
∫i2dt	i2t value	TC=25°C , tp=10ms	55.1*	A2S
Ptot	Power dissipation	TC=25°C TC=110°C	197* 85*	W
Tj	Operating junction temperature		-55~175	°C
Tstg	Storage temperature		-55~175	°C

Package Outlines

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YANGZHOU POSITIONING TECH CO., LTD.

Audited supplier

8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module , Power Diode, Silicon Transistor, Bridge Rectifier

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