YZPST-IKW40N65H3（YZPST-RG40N065FT)

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

P/N: YZPST-IKW40N65H3（YZPST-RG40N065FT)

650V /40A Trench Field Stop IGBT

FEATURES

High breakdown voltage up to 650V for improved reliability

Trench-Stop Technology offering :

High speed switching

High ruggedness, temperature stable

Low VCEsat

Easy parallel switching capability due to positive temperature coefficient in VCEsat

Enhanced avalanche capability

APPLICATION

Uninterruptible Power Supplies

Inverter

Welding Converters

PFC applications

Converter with high switching frequency

Maximum Ratings （Tj= 25℃ unless otherwise specified）

Parameter	Symbol	Value	Unit
Collector-Emitter Breakdown Voltage	VCE	650	V
DC collector current, limited by Tjmax TC = 25°C TC = 100°C	IC	80 40	A
Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C	IF	80 40	A
Continuous Gate-emitter voltage	VGE	±20	V
Transient Gate-emitter voltage	VGE	±30	V
Turn off safe operating area VCE ≤650V, Tj ≤ 175°C, tp = 1μs	-	120	A
Pulse collector current, VGE = 15V, tp limited by Tjmax	ICM	120	A
Power dissipation , Tj=25°C	Ptot	188	W
Operating junction temperature	Tj	-40...+175	°C
Storage temperature	TS	-55...+150	°C
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s	-	260	°C
Mounting torque, M3 screw Maximum of mounting processes: 3	M	0.6	Nm

Thermal Resistance

Parameter	Symbol	Max. Value	Unit
IGBT thermal resistance, junction - case	Rθ(j-c)	0.8	K/W
Diode thermal resistance, junction - case	Rθ(j-c)	1.1	K/W
Thermal resistance, junction - ambient	Rθ(j-a)	40	K/W

TO247 package information

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YANGZHOU POSITIONING TECH CO., LTD.

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8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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