Rectifier Diode RD8012
3 month ago
|
ABSOLUTE MAXIMUM RATINGS |
|||
|
Parameter |
Symbol |
Value |
Unit |
|
Storage junction temperature range |
Tstg |
-55 ~ 150 |
℃ |
|
Operating junction temperature range |
Tj |
-55~ 150 |
℃ |
|
Maximum Repetitive peak reverse voltage |
VRRM |
1600 |
V |
|
Maximum RMS Voltage |
VRMS |
1120 |
V |
|
Maximum DC Blocking Voltage |
VDC |
1600 |
V |
|
Average Forward Current |
IF(AV) |
30 |
A |
|
Forward Surge Current (Non-repetitive) @60Hz Half- sine wave, 1 cycle, Tj=25℃ |
IFSM |
350 |
A |
|
Typical junction capacitance VR=4.0V, f= 1MHz |
CJ |
150 |
pF |
|
Thermal Resistances |
|||
|
Symbol |
Parameter |
Value |
Unit |
|
Rth(j-c) |
thermal resistance junction to case |
0.9 |
℃/W |
|
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) |
||||
|
Parameter |
Symbol |
Value |
Unit |
|
|
Maximum instantaneous forward voltage drop per diode @ IF=30A |
VF |
1.2 |
V |
|
|
Maximum DC reverse current at rated DC blocking voltage per diode |
Tj=25℃ |
IR |
5 |
μA |
|
Tj=150℃ |
1 |
mA |
||
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
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Silicon Transistor,
Bridge Rectifier
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