MJD31C TO252

4 week ago

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8 year

Product details

100V P-Channel Trench Power MOSFET

General Description

The R 100P11A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications.

Features

Low Gate Charge

100% UIS Tested, 100% DVDS Tested

High Power and current handing capability

Lead free product is acquired

Application

PWM Applications

Load Switch

Power Management

Key Performance Parametes

Parameter	Value	Unit
VDS	-100	V
RDS(ON)_TYP	156	mΩ
ID	-11	A
QG	42.5	nC

Table 1. Absolute Maximum Ratings (TC=25℃ unless otherwise noted)

Symbol	Parameter	Limit	Unit
VDS	Drain-Source Voltage (VGS=0V)	-100	V
VGS	Gate-Source Voltage (VDS=0V)	±20	V
ID	Drain Current-Continuous(TC=25℃)	-11	A
ID	Drain Current-Continuous(TC=100℃)	-6.7	A
IDM (pluse)	Drain Current-Continuous@ Current-Pulsed (Note 1)	-44	A
PD	Maximum Power Dissipation(TC=25℃)	48	W
PD	Maximum Power Dissipation(TC=100℃)	19	W
EAS	Avalanche energy (Note 2)	72	mJ
TJ, TSTG	Operating Junction and Storage Temperature Range	-55 To 150	℃

Table 2. Thermal Characteristic

Symbol	Parameter	Typ	Max	Unit
RθJC	Thermal Resistance, Junction-to-Case		2.6	℃/W

TO-252 Package Information

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YANGZHOU POSITIONING TECH CO., LTD.

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8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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