YZPST-BTW69 20-50MA TO3P
2 month ago
Symbol | Value | Unit |
IT(RMS) | 50 | A |
IGT | ≤80 | mA |
VTM | ≤1.8 | V |
Parameter | Symbol | Value | Unit | |
Storage junction temperature range | Tstg | -40 to +150 | ℃ | |
Operrating junction temperature range | Tj | -40 to +125 | ℃ | |
Repetitive Peak Off-state Voltage Tj=25℃ Repetit ve Peak Reverse Voltage Tj=25℃ |
VDRM VRRM |
V | ||
BTW69-1200 | 1200 | |||
RMS on-state current (all conduction angels) | TO-P3 Tc=80℃ | IT(RMS) | 50 | A |
Average on-state current (half sine wave) | TO-P3 Tc=80℃ | IT(AV) | 40 | A |
Non repelitive surge peak on-state current (half sine cycle,Tj=25℃) |
f=50 Hz t=10ms | ITSM | 520 | A |
f=60 Hz t=8.3ms | 540 | |||
I²t Value for fusing | tp=10ms | I²t | 1350 | A²s |
Repetitive rate of rise of on-state current after triggering ITM=20A IG=50mA dlc/dt 50mA/ms |
dl/dt | 150 | Aμs | |
Peak gate current tp=20us,Tj=125℃ | IGM | 1.5 | A | |
Peak gate power tp=20us,Tj=125℃ | PGM | 10 | W | |
Average gate power dissipation Tj=125℃ | PG(AV) | 2 | W |
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier
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