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YZPST-BTW69 20-50MA TO3P

2 month ago
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Product details
YZPST-BTW69-1200 SCRs
High current density due to double mesa technology.
series of silicon controlled TO-P3(insulated)
rectifiers are specifically designed for high power switching and phase control applications.
series are suitable for general purpose applications, a high gate sensitvity is required.
provides a 2500V RMS isolation voltage from all three terminalsto extemal heetsink.
YZPST-BTW69-1200 TO-P3
MAIN FEATURES
Symbol Value Unit
IT(RMS) 50 A
IGT   ≤80 mA
VTM ≤1.8 V
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Storage junction temperature range Tstg -40 to +150
Operrating junction temperature range Tj -40 to +125
Repetitive Peak Off-state Voltage Tj=25
Repetit ve Peak Reverse Voltage Tj=25
  VDRM
VRRM
  V
BTW69-1200 1200 
   
RMS on-state current (all conduction angels) TO-P3 Tc=80 IT(RMS) 50  A
 
Average on-state current (half sine wave) TO-P3 Tc=80 IT(AV) 40  A
 
Non repelitive surge peak on-state current
(half sine cycle,Tj=25)
f=50   Hz   t=10ms ITSM 520  A
f=60   Hz  t=8.3ms 540 
I²t Value for fusing tp=10ms I²t 1350  A²s
Repetitive rate of rise of on-state current after triggering
ITM=20A IG=50mA dlc/dt 50mA/ms
dl/dt 150  Aμs
Peak gate current     tp=20us,Tj=125 IGM 1.5  A
Peak gate power       tp=20us,Tj=125 PGM 10  W
Average gate power dissipation    Tj=125 PG(AV) W
 
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