YZPST-BTW69 20-50MA TO3P

3 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

YZPST-BTW69-1200 SCRs

High current density due to double mesa technology.

series of silicon controlled TO-P3(insulated)

rectifiers are specifically designed for high power switching and phase control applications.

series are suitable for general purpose applications, a high gate sensitvity is required.

provides a 2500V RMS isolation voltage from all three terminalsto extemal heetsink.

MAIN FEATURES

Symbol	Value	Unit
IT(RMS)	50	A
IGT	≤80	mA
VTM	≤1.8	V

ABSOLUTE MAXIMUM RATINGS

Parameter		Symbol	Value	Unit
Storage junction temperature range		Tstg	-40 to +150	℃
Operrating junction temperature range		Tj	-40 to +125	℃
Repetitive Peak Off-state Voltage Tj=25℃ Repetit ve Peak Reverse Voltage Tj=25℃		VDRM VRRM		V
	BTW69-1200		1200

RMS on-state current (all conduction angels)	TO-P3 Tc=80℃	IT(RMS)	50	A

Average on-state current (half sine wave)	TO-P3 Tc=80℃	IT(AV)	40	A

Non repelitive surge peak on-state current (half sine cycle,Tj=25℃)	f=50 Hz t=10ms	ITSM	520	A
	f=60 Hz t=8.3ms		540
I²t Value for fusing	tp=10ms	I²t	1350	A²s
Repetitive rate of rise of on-state current after triggering ITM=20A IG=50mA dlc/dt 50mA/ms		dl/dt	150	Aμs
Peak gate current tp=20us,Tj=125℃		IGM	1.5	A
Peak gate power tp=20us,Tj=125℃		PGM	10	W
Average gate power dissipation Tj=125℃		PG(AV)	2	W

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YANGZHOU POSITIONING TECH CO., LTD.

Audited supplier

8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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