YZPST-RH55N30T

3 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

P/N: YZPST-RH55N30T

Logic-LeveI Gate Drive

Advanced process TechnoIogy

Dynamic dv/dt Rating

175℃ operating TemperatUre

Fast switching

FUIIyAvaIanche Rated

Lead-Free

RF Power MOSFET - 30MHz

V DSS=55V

RDS(on)=0.035Ω

ID=30A

AbsoIute Maximum Ratings

	parameter	Max.	units
ID @ Tc = 25。c	continuous Drain current, VGS @ 10V	30
ID @ Tc = 100。c	continuous Drain current, VGS @ 10V	21
ID @ Tc = 100。c	continuous Drain current, VGS @ 10V	21	A
IDM	PuIsed Drain current 0①	110
PD @Tc = 25。c	Power Dissipation	68	w
	Linear Derating Factor	0.45	w/。c
VGS	Gate-to-source VoItage	±16	V
EAS	singIe PuIse AvaIanche Energy ②	110	mJ
IAR	AvaIanche current①	16	A
EAR	Repetitive AvaIanche Energy①	6.8	mJ
dv/dt	Peak Diode Recovery dv/dt ③	5	V/ns
TJ	operating Junction and	-55 to + 175
TJ	operating Junction and	-55 to + 175
	storage Temperature Range		。c
TSTG	storage Temperature Range		。c
	soIdering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 Ibf.in (1.1N.m)

ThermaI Resistance

	parameter	Min.	TYP.	Max.	units
RθJc	Junction-to-case	一一一一	一一一一	2.2	℃/W
RθcS	case-to-sink, FIat, Greased surface	一一一一	0.5	一一一一
RθcS	case-to-sink, FIat, Greased surface	一一一一	0.5	一一一一
RθJA	Junction-to-Ambient	一一一一	一一一一	62

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YANGZHOU POSITIONING TECH CO., LTD.

Audited supplier

8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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