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YZPST-MEO450-12DA

2 month ago
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Product details
P/N: YZPST-MEO450-12DA
PRODUCT FEATURES
Fast recovery epitaxial diode
Soft Recovery behaviour
Planar passivated chips
Short recovery time
Low Switching losses
High reliability circuit operation
Low voltage peaks for reduced protection circuits
Low noise switching
Low losses
APPLICATIONS
Anti-Parallel diode for high frequency switching devices
Free wheeling diode in converters And motor control circuits
Uninterruptible Power Supply (UPS)
Induction heating and melting
Ultrasonic cleaners and welders
 
YZPST-MEO450-12DA

ABSOLUTE MAXIMUM RATINGS      TC=25°C unless otherwise specified

 

Symbol

Parameter

Test Conditions

Values

Unit

VR

Maximum D.C. Reverse Voltage

 

1200

V

VRRM

Maximum Repetitive Reverse Voltage

 

1200

V

IF(AV)

Average Forward Current

TJ= 150°C

453

A

IF(RMS)

RMS Forward Current

TJ=75°C

640

A

 

IFSM

max    Surge    Forward Current

t = 10ms (50Hz),sine,TJ=45°C

4800

A

t = 8.3ms (60Hz),sine,TJ=45°C

5280

t = 10ms (50Hz),sine,TJ= 150°C

4320

t = 8.3ms (60Hz),sine,TJ= 150°C

4750

I2t

I2t value for fusing

t = 10ms (50Hz),sine,TJ=45°C

115.2

2 kA s

t = 8.3ms (60Hz),sine,TJ=45°C

117.1

t = 10ms (50Hz),sine,TJ= 150°C

93.3

t = 8.3ms (60Hz),sine,TJ= 150°C

94.8

VTO

Threshold voltage

TJ= 150°C

1.16

V

rT

Slope resistance

TJ= 150°C

1.15

m Ω

Ptot

Total power dissipation

TJ=25°C

1750

W

TJ

Junction Temperature

 

-40 to +150

°C

TSTG

Storage Temperature Range

 

-40 to +125

°C

 

Visol

Insulation Test Voltage

AC, t= 1min

2500

V

Torque

Module-to-Sink

RecommendedM6

35

N·m

Module Electrodes

RecommendedM6

35

N·m

RθJC

Thermal Resistance

Junction-to-Case

0.071

°C /W

YZPST-MEO450-12DA-1
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Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module , Power Diode, Silicon Transistor, Bridge Rectifier