YZPST-T4150-08FT

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junctiontemperature range

Tstg

-40~ 150

℃

Operating junction temperature range

Tj

-40~ 125

℃

Repetitive peak off-state voltage (T =25℃)

VDRM

800/1600

V

Repetitive peak reverse voltage (T =25℃)

VRRM

800/1600

V

RMS on-state current(TC=80℃)

IT(RMS)

40

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

ITSM

400

A

I2t value for fusing (tp= 10ms)

I2t

800

A2 S

Critical rate of rise of on-state current(I =2×IGT)

di/dt

50

A/μS

Peak gate current

IGM

8

A

Peakgate power dissipation

PGM

40

W

Average gate power dissipation

PG(AV)

1

W

Thermal Resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

0.8

℃/W

Rth(j-a)

Junction to ambient

50

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol

Test Condition

Quadrant

Value

Unit

IGT

VD= 12V,IT=0.1A,Tj=25 ℃

Ⅰ Ⅱ Ⅲ

MAX.

50

mA

VGT

Ⅰ Ⅱ Ⅲ

MAX.

1.3

V

VGD

VD=VDRMTj=125℃

Ⅰ Ⅱ Ⅲ

MIN.

0.2

V

IL

IG= 1.2IGT

Ⅰ-Ⅲ

MAX.

100

mA

Ⅱ

160

IH

IT=500mA

MAX.

80

mA

dV/dt

VD=2/3VDRMGate Open Tj=125℃

MIN.

1000

V/μs

STATIC CHARACTERISTICS

Symbol

Parameter

Value(MAX.)

Unit

VTM

ITM=60A tp=380μs

Tj =25℃

1.5

V

VTO

Threshold voltage

Tj = 125℃

0.80

V

RD

Dynamic resistance

Tj = 125℃

15

mΩ

IDRM

VD=VDRMVR=VRRM

Tj =25℃

10

μA

IRRM

Tj = 125℃

6

mA