YZPST-RM016120T

4 week ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

P/N:YZPST-RM016120T SiC MOSFET

Features

Wide bandgap SiC MOSFET technology

Low On-Resistance with High Blocking Voltage

Low Capacitances with High-Speed switching

Low reverse recovery(Qrr)

Halogen free, RoHs compliant

Benefits

Reduce switching losses

Increased system Switching Frequency

Increased power density

Reduction of heat sink requirements

Applications

Switch mode power supplies

Renewable energy

On Board Charger

High voltage DC/DC converters

Package Pin Definitions

Pin1- Gate

Pin2- Drain

Pin3- Power Source

TO-247-3

Maximum Ratings (TC=25℃ unless otherwise specified)

Symbol	Parameter	Test conditions	Value	Unit	Note
VDSmax	Drain-Source Voltage	VGS = 0V, ID = 100μA	1200	V
VGSmax	Gate-Source voltage	AC (f > 1 Hz)	-10/+25	V
ID	Continuous Drain current	VGS = 15V, TC = 25°C VGS = 18V, TC = 25°C	140	A	Fig. 14
ID	Continuous Drain current	VGS = 15V, TC = 100°C VGS = 18V, TC = 100°C	99	A	Fig. 14
ID,pulse	Pulsed Drain Current	Pulse with tp limited by Tjmax	243	A
PD	Power Dissipation	TC = 25°C, Tj = 175°C	577	W	Fig. 16
Tj	Operating junction temperature		-55~175	°C
Tstg	Storage temperature		-55~175	°C
	TO-247 mounting torque	M3 Screw	0.7	Nm

Thermal Characteristics

Symbol	Parameter	Value			Unit	Note
Symbol	Parameter	Min.	Typ.	Max.	Unit	Note
Rth(jc)	Thermal resistance from Junction to Case		0.26		K/W	Fig. 15
Rth(ja)	Thermal resistance from Junction to Ambient		40		K/W	Fig. 15

Electrical Characteristics Tj=25°C unless otherwise specified

Static Characteristics

Symbol	Parameter	Test conditions	Value			Unit	Note
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit	Note
V(BR)DSS	Drain-Source Breakdown voltage	VGS = 0V, ID = 100μA	1200			V
VGS(th)	Gate Threshold voltage	VGS = VDS, ID = 25mA		2.9		V	Fig. 9
VGS(th)	Gate Threshold voltage	VGS = VDS, ID = 25mA, Tj= 175°C		2.0		V	Fig. 9
IGSS	Gate-Source Leakage current	VGS = 15V, VDS = 0V			250	nA
IDSS	Zero Gate Voltage Drain Current	VDS = 1200V, VGS = 0V, Tj = 25°C		1	50	μA
RDS(on)	Drain-Source On-state Resistance	VGS = 15V, ID = 75A VGS = 18V, ID = 75A		16 14	24	mΩ	Fig. 3, 4, 5
RDS(on)	Drain-Source On-state Resistance	VGS = 15V, ID = 75A, Tj = 175°C VGS = 18V, ID = 75A, Tj = 175°C		26 25		mΩ	Fig. 3, 4, 5
gfs	Transconductance	VDS = 15V, ID = 75A		63		S	Fig. 6
gfs	Transconductance	VDS = 15V, ID = 75A, Tj = 175°C		58		S	Fig. 6

Package Dimensions

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YANGZHOU POSITIONING TECH CO., LTD.

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8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module , Power Diode, Silicon Transistor, Bridge Rectifier

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