MDMA660U1600PTEH

Symbol

Definition                                              Conditions

min.

typ.

max.

Unit

VRSM

max. non-repetitive reverse blocking voltage

TVJ   =   25°C

1700

V

VRRM

max. repetitive reverse blocking voltage

TVJ   =   25°C

1600

V

IR

reverse current                                     VR      = 1600 V

VR     = 1600 V

TVJ   =   25°C

TVJ   = 150°C

200

3

µA

mA

VF

forward voltage drop                             IF =   220 A

IF =  660 A

IF =  220 A

IF =  660 A

TVJ   =   25°C

1.28

1.95

V

V

TVJ   = 125°C

1.19

1.95

V

V

I DAV

bridge output current

TC =   85°C

rectangular        d = ⅓

TVJ   = 150°C

660

A

VF0

rF

threshold voltage

slope resistance

} for power loss calculation only

TVJ   = 150°C

0.77

1.8

V mΩ

RthJC

thermal resistance junction to case

0.15

K/W

RthCH

thermal resistance case to heatsink

0.075

K/W

Ptot

total power dissipation

TC    =   25°C

830

W

IFSM

max. forward surge current                  t =  10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t =  10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

TVJ   =   45°C VR     = 0 V

5.00

5.40

kA

kA

TVJ   = 150°C VR     = 0 V

4.25

4.59

kA

kA

I²t

value for fusing                                    t =  10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t =  10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

TVJ   =   45°C VR     = 0 V

125.0

121.3

kA²s

kA²s

TVJ   = 150°C VR     = 0 V

90.3

87.6

kA²s

kA²s

CJ

junction capacitance                             VR =   400 V; f = 1 MHz

TVJ   =   25°C

208

pF