R80N65HTNF TO247-3
7 month ago|
Parameter |
Value |
Unit |
|
VCES, min @ 25 °C |
650 |
V |
|
Maximum junction temperature |
175 |
°C |
|
IC, pulse |
320 |
A |
|
VCE(sat), typ @ VGE=15 V |
1.35 |
V |
|
Qg |
224 |
nC |
Marking Information
|
Product Name |
Package |
Marking |
|
R8 0N65HTNF |
TO247 |
R80N65HTN |
Package & Pin Information

Absolute Maximum Ratings at Tvj=25 。C unless otherwise noted
|
Parameter |
Symbol |
Value |
Unit |
|
Collector emitter voltage |
VCES |
650 |
V |
|
Gate emitter voltage |
VGES |
±20 |
V |
|
Transient gate emitter voltage, TP≤10 µs, D<0.01 |
±30 |
V |
|
|
Continuous collector current1) , TC=25 °C |
IC |
114 |
A |
|
Continuous collector current1) , TC=100 °C |
80 |
A |
|
|
Pulsed collector current2) , TC=25 °C |
IC, pulse |
320 |
A |
|
Diode forward current1) , TC=25 °C |
IF |
114 |
A |
|
Diode forward current1) , TC=100 °C |
80 |
A |
|
|
Diode pulsed current2) , TC=25 °C |
IF, pulse |
320 |
A |
|
Power dissipation3) , TC=25 °C |
PD |
395 |
W |
|
Power dissipation3) , TC=100 °C |
198 |
W |
|
|
Operation and storage temperature |
Tstg, Tvj |
-55 to 175 |
°C |
Package Information

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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier