IGBT YZPST-D100H065AT1S3 TO247
3 year ago
Trench Field-Stop Technology IGBT
YZPST-D100H065AT1S3
Features
650V, 100A
VCE(sat)(typ.) =1.75V@VGE=15V, IC=100A
Maximum Junction Temperature 175 
Pb-free Lead Plating; RoHS Compliant
Applications
Solar Converters
Uninterrupted Power Supply
Welding Converters
Mid to High Range Switching Frequency Converters
Key Performance and Package Parameters
|
Order codes |
VCE |
IC |
VCEsat, Tvj=25 |
Tvjmax |
Marking |
Package |
|
D100H065AT1S3 |
650V |
100A |
1.75V |
175 ℃ |
D100H65AT1 |
TO247-3L |
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
±20
V
IC
Continuous Collector Current (TC=25 ℃ )
125
A
Continuous Collector Current (TC=100 ℃ )
100
A
ICM
Pulsed Collector Current (Note 1)
200
A
Diode Forward Current (TC=25 ℃ )
125
A
IF
Diode Forward Current (TC=100 ℃ )
100
A
Maximum Power Dissipation (TC=25 ℃ )
385
W
PD
Maximum Power Dissipation (TC=100 ℃ )
192
W
TJ
Operating Junction Temperature Range
-40 to 175
℃
TSTG
Storage Temperature Range
-55 to 150
℃
Electrical Characteristics (Tc=25
unless otherwise noted.)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVCES | Collector-Emitter | VGE=0V, IC=200uA | 650 | V | ||
| Breakdown Voltage | --- | --- | ||||
| ICES | Collector-Emitter Leakage Current | VCE=650V, VGE=0V | 1 | mA | ||
| --- | --- | |||||
| Gate Leakage Current, Forward | VGE=20V, VCE=0V | 600 | nA | |||
| --- | --- | |||||
| IGES | Gate Leakage Current, Reverse | VGE=-20V, VCE=0V | 600 | nA | ||
| --- | --- | |||||
| VGE(th) | Gate Threshold Voltage | VGE=VCE , IC=750uA | 4.2 | --- | 6 | V |
| VCE(sat) | Collector-Emitter | VGE=15V, IC=100A, Tj=25 ℃ | --- | 1.75 | 2.2 | V |
| Saturation Voltage | VGE=15V, IC=100A, Tj=125 ℃ | --- | 2.05 | --- | V | |
| td(on) | Turn-on Delay Time | --- | 35 | --- | ns | |
| tr | Turn-on Rise Time | VCC=400V | --- | 155 | --- | ns |
| td(off) | Turn-off Delay Time | VGE=±15V | --- | 188 | --- | ns |
| tf | Turn-off Fall Time | IC=100A | --- | 69 | --- | ns |
| Eon | Turn-on Switching Loss | RG=8 | --- | 4.35 | --- | mJ |
| Eoff | Turn-off Switching Loss | Inductive Load | --- | 1.11 | --- | mJ |
| Ets | Total Switching Loss | TC=25 ℃ | --- | 5.46 | --- | mJ |
| Cies | Input Capacitance | VCE=25V | --- | 7435 | --- | pF |
| Coes | Output Capacitance | VGE=0V | --- | 237 | --- | pF |
| Cres | Reverse Transfer | f =1MHz | 128 | pF | ||
| Capacitance | --- | --- |
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IF=100A, Tj=25 ℃
---
1.65
2.2
V
VF
Diode Forward Voltage
IF=100A, Tj=150 ℃
---
1.4
---
V
trr
Diode Reverse Recovery Time
201
ns
VR=400V
---
---
IF=100A
Irr
Diode peak Reverse
dIF/dt=200A/us
19
A
Recovery Current
TC=25 ℃
---
---
Qrr
Diode Reverse Recovery Charge
2.45
uC
---
---
Note1 
Repetitive rating, pulse width limited by maximum junction temperature
Package Information
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Main Product:
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