IGBT Module G100HF65D1

3 year ago

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8 year

Product details

650V 100A IGBT Module YZPST-G100HF65D1
Features：
650V100A,VCE(sat)(typ.)=1.80V
Low inductive design
Lower losses and higher energy
Field Stop IGBT Technology
Excellent short circuit ruggedness

General Applications：
Auxiliary lnverter
Inductive Heating and Welding
Solar Applications
UPS Systems

Absolute Maximum Ratings of IGBT

VCES Collector to Emitter Voltage 650 V

VGES Continuous Gate to Emitter Voltage ±30 V

TC  = 25°C 200

IC Continuous Collector Current TC  = 100°C 100 A

ICM Pulse Collector Current TJ  = 150°C 200 A

PD Maximum Power Dissipation (IGBT) TC  = 25°C, 390 W

TJ  = 150°C

tsc Short Circuit Withstand Time > 10 µs

TJ Maximum IGBT Junction Temperature 150 °C

TJOP Maximum Operating Junction Temperature Range -40 to +150 °C

Tstg Storage Temperature Range -40 to +125 °C

Absolute Maximum Ratings of Freewheeling Diode

VRRM Repetitive Peak Reverse Voltage Preliminary Data 650 V

Diode Continuous Forward Current TC  = 25°C 200

IF Diode Continuous Forward Current TC  = 100°C 100 A

IFM Diode Maximum Forward Current 200 A

Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)

Parameter Test Conditions Min Typ Max Unit

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 650 V

ICES Collector to Emitter VGE  = 0V,VCE    = VCES 1 mA

Leakage  Current

IGES Gate to Emitter Leakage Current VGE  = ±30V, VCE   = 0V 200 nA

VGE(th) Gate Threshold Voltage IC  = 1mA, VCE  = VGE 4.5 5.5 V

TJ  = 25°C 1.8 2

VCE(sat) Collector  to  Emitter  Saturation Voltage (Module Level) IC  = 100A, VGE  = 15V TJ  = 125°C 2 V

Switching Characteristics of IGBT

td(on) Turn-on Delay Time TJ  = 25°C 60 ns

tr Turn-on Rise Time TJ  = 25°C 55 ns

td(off) Turn-off Delay Time VCC  = 400V TJ  = 25°C 210 ns

tf Turn-off  Fall Time IC  = 100A TJ  = 25°C 65 ns

Eon Turn-on Switching Loss RG  = 10Ω TJ  = 25°C 1.2 mJ

Eoff Turn-off Switching Loss VGE = ±15V TJ  = 25°C 1 mJ

Qg Total Gate Charge Inductive Load TJ  = 25°C 500 nC

Rgint Integrated gate resistor f  = 1M; TJ  = 25°C 6.9 Ω

Vpp = 1V

Cies Input Capacitance TJ  = 25°C 3.9

VCE = 25V

Coes Output Capacitance VGE = 0V TJ  = 25°C 0.35 nF

Cres Reverse Transfer f = 1MHz TJ  = 25°C 0.25

Capacitance

RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.32 °C/W

Electrical and Switching Characteristics of Freewheeling Diode

VF TJ  = 25°C 1.35

Diode Forward Voltage IF  = 100A , V

VGE  = 0V TJ   = 125°C 1.2

trr Diode Reverse Recovery Time IF  = 100A, TJ  = 25°C 80 ns

Irr Diode Peak Reverse Recovery Current di/dt = 550A/µs, Vrr = 400V, TJ  = 25°C 30 A

Qrr Diode Reverse Recovery Charge TJ  = 25°C 6.2 uC

RθJC Thermal Resistance, Junction-to-Case (Diode) 0.75 °C/W

Module Characteristics

Parameter

Min.

Typ.

Max.

Unit

Viso

Isolation Voltage

(All Terminals Shorted),f = 50Hz, 1minute

2500

V

RθCS

Case-To-Sink(Conductive Grease Applied)

0.1

°C/W

M

Power Terminals Screw: M5

3.0

5.0

N·m

M

Mounting Screw: M6

4.0

6.0

N·m

G

Weight

160

g

Internal Circuit:

Package Dimension

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Main Product: Semiconductor Triac , Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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VCES	Collector to Emitter Voltage		650	V
VGES	Continuous Gate to Emitter Voltage		±30	V
		TC = 25°C	200
IC	Continuous Collector Current	TC = 100°C	100	A
ICM	Pulse Collector Current	TJ = 150°C	200	A
PD	Maximum Power Dissipation (IGBT)	TC = 25°C,	390	W
PD	Maximum Power Dissipation (IGBT)	TJ = 150°C	390	W
tsc	Short Circuit Withstand Time		> 10	µs
TJ	Maximum IGBT Junction Temperature		150	°C
TJOP	Maximum Operating Junction Temperature Range		-40 to +150	°C
Tstg	Storage Temperature Range		-40 to +125	°C

VRRM	Repetitive Peak Reverse Voltage Preliminary Data		650	V
	Diode Continuous Forward Current	TC = 25°C	200
IF	Diode Continuous Forward Current	TC = 100°C	100	A
IFM	Diode Maximum Forward Current		200	A

Parameter		Test Conditions		Min	Typ	Max	Unit
BVCES	Collector to Emitter Breakdown Voltage	VGE = 0V, IC = 1mA		650			V
ICES	Collector to Emitter	VGE = 0V,VCE = VCES				1	mA
ICES	Leakage Current	VGE = 0V,VCE = VCES				1	mA
IGES	Gate to Emitter Leakage Current	VGE = ±30V, VCE = 0V				200	nA
VGE(th)	Gate Threshold Voltage	IC = 1mA, VCE = VGE		4.5		5.5	V
			TJ = 25°C		1.8	2
VCE(sat)	Collector to Emitter Saturation Voltage (Module Level)	IC = 100A, VGE = 15V	TJ = 125°C		2		V

td(on)	Turn-on Delay Time		TJ = 25°C	60		ns


tr	Turn-on Rise Time		TJ = 25°C	55		ns
td(off)	Turn-off Delay Time	VCC = 400V	TJ = 25°C	210		ns
tf	Turn-off Fall Time	IC = 100A	TJ = 25°C	65		ns
Eon	Turn-on Switching Loss	RG = 10Ω	TJ = 25°C	1.2		mJ
Eoff	Turn-off Switching Loss	VGE = ±15V	TJ = 25°C	1		mJ
Qg	Total Gate Charge	Inductive Load	TJ = 25°C	500		nC
Rgint	Integrated gate resistor	f = 1M;	TJ = 25°C	6.9		Ω
Rgint	Integrated gate resistor	Vpp = 1V	TJ = 25°C	6.9		Ω
Cies	Input Capacitance		TJ = 25°C	3.9
Cies	Input Capacitance	VCE = 25V	TJ = 25°C	3.9
Coes	Output Capacitance	VGE = 0V	TJ = 25°C	0.35		nF
Cres	Reverse Transfer	f = 1MHz	TJ = 25°C	0.25
Cres	Capacitance		TJ = 25°C	0.25
RθJC	Thermal Resistance, Junction-to-Case (IGBT)				0.32	°C/W

VF			TJ = 25°C	1.35
	Diode Forward Voltage	IF = 100A ,	TJ = 25°C	1.35		V
		VGE = 0V	TJ = 125°C	1.2
trr	Diode Reverse Recovery Time	IF = 100A,	TJ = 25°C	80		ns
Irr	Diode Peak Reverse Recovery Current	di/dt = 550A/µs, Vrr = 400V,	TJ = 25°C	30		A
Qrr	Diode Reverse Recovery Charge		TJ = 25°C	6.2		uC
RθJC	Thermal Resistance, Junction-to-Case (Diode)				0.75	°C/W

Parameter		Min.	Typ.	Max.	Unit
Viso	Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute	2500			V
RθCS	Case-To-Sink(Conductive Grease Applied)		0.1		°C/W
M	Power Terminals Screw: M5	3.0		5.0	N·m
M	Mounting Screw: M6	4.0		6.0	N·m
G	Weight		160		g