IGBT Module G100HF120D1
3 year ago
1200V100A,VCE(sat)(typ.)=3.0V Low inductive design
Lower losses and higher energy
Ultrafast switching speed
Excellent short circuit ruggedness
General Applications：
Auxiliary lnverter
Inductive Heating and Welding
UPS Systems
Absolute Maximum Ratings of IGBT
| VCES | Collector to Emitter Voltage | 1200 | V | |
| VGES | Continuous Gate to Emitter Voltage | ±30 | V | |
| TC = 25°C | 200 | |||
| IC | Continuous Collector Current | TC = 100°C | 100 | A |
| ICM | Pulse Collector Current | TJ = 150°C | 200 | A |
| PD | Maximum Power Dissipation (IGBT) | TC = 25°C, | 430 | W |
| tsc | > 10 | µs | ||
| Short Circuit Withstand Time | ||||
| Maximum IGBT Junction Temperature | 150 | °C | ||
| TJ | ||||
| TJOP | ||||
| Maximum Operating Junction Temperature Range | -40 to +150 | °C | ||
| Tstg | Storage Temperature Range | -40 to +125 | °C | |
| VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 1200 | V | |
| TC = 25°C | 200 | |||
| IF | Diode Continuous Forward Current | TC = 100°C | 100 | A |
| IFM | Diode Maximum Forward Current | 200 | A | |
Absolute Maximum Ratings of Freewheeling Diode
| VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 1200 | V | |
| TC = 25°C | 200 | |||
| IF | Diode Continuous Forward Current | TC = 100°C | 100 | A |
| IFM | Diode Maximum Forward Current | 200 | A | |
Switching Characteristics of IGBT
| td(on) | TJ = 25°C | 30 | |||||
| Turn-on Delay Time | ns | ||||||
| TJ = 125°C | 35 | ||||||
| TJ = 25°C | 50 | ||||||
| tr | Turn-on Rise Time | TJ = 125°C | 55 | ns | |||
| TJ = 25°C | 380 | ||||||
| td(off) | Turn-off Delay Time | TJ = 125°C | 390 | ns | |||
| TJ = 25°C | 110 | ||||||
| tf | Turn-off Fall Time | TJ = 125°C | 160 | ns | |||
| VCC = 600V | TJ = 25°C | 4.6 | |||||
| Eon | Turn-on Switching Loss | IC = 100A | TJ = 125°C | 5.7 | mJ | ||
| RG = 5.6Ω | TJ = 25°C | 3.1 | |||||
| Eoff | Turn-off Switching Loss | VGE = ±15V | TJ = 125°C | 5.1 | mJ | ||
| Qg | Total Gate Charge | Inductive Load | TJ = 25°C | 870 | nC | ||
| Rgint | Integrated gate resistor | f = 1M; | TJ = 25°C | 1.9 | Ω | ||
| Vpp = 1V | |||||||
| Cies | Input Capacitance | TJ = 25°C | 8 | ||||
| VCE = 25V | |||||||
| Coes | Output Capacitance | VGE = 0V | TJ = 25°C | 1.35 | nF | ||
| Cres | Reverse Transfer | f = 1MHz | TJ = 25°C | 0.81 | |||
| Capacitance | |||||||
| RθJC | Thermal Resistance, Junction-to-Case (IGBT) | 0.29 | °C/W | ||||
Package Dimension
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