Transistor PNP SS8550 TO92

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

TO-92 Plastic-Encapsulate Transistors

YZPST-SS8550 TRANSISTOR (PNP)

FEATUREs
Power dissipation

PC :1W (Ta=25 ℃)

TO-92

ORDERINGINFORMATION

PartNumber	Package	PackingMethod	PackQuantity
SS8550	TO-92	Bulk	1000pcs/Bag
SS8550-TA	T0-92	Tape	2000pcs/Box

MAX1MUMRAT1NGs(Ta=25℃ unlessotherwise noted)

symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-25	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current -Continuous	- 1.5	A
PD	Collector Power Dissipation	1000	mW
R θ JA	Thermal Resistance f rom Junction to Ambient	125	℃ / W
TJ,Tstg	Operation Junction and Storage Temperature Range	-55 -＋150	℃

Ta=25 ℃ unless otherwise specified

Parameter	symbol	Test	Min	Typ	Max	Unit


		conditions
Collector.base	V(BR)CBO	IC=- 100uA, IE=0	-40			V
breakdown
voltage
Collector.emitter	V(BR)CEO	IC=-0. 1mA, IB=0	-25			V
breakdown voltage
Emitter.base	V(BR)EBO	IE=- 100uA, IC=0	-5			V
breakdown
voltage
Collector	ICBO	VCB=-40V, IE=0			-0. 1	uA
cut.off
current
Emitter	ICEO	VCE=-20V, IE=0			-0. 1	uA
cut.off
current
Emitter	IEBO	VEB=-5V, IC=0			-0. 1	uA
cut.off
current
DC	hFE(1)	VCE=- 1V, IC=- 100mA	85		400
current
gain	hFE(2)	VCE=- 1V, IC=-800mA	40
Collector.emitter	VCE(sat)	IC=-800mA, IB=-80mA			-0.5	V
saturation
voltage
Base.emitter	VBE(sat)	IC=-800mA, IB=-80mA			-1.2	V
saturation voltage
Base.emitter	VBE(on)	VCE=- 1V, IC=- 10mA			-1	V
voltage
out	Cob	VCB=- 10V, IE=0mA,f=1MHZ			20	pF
capacitance
Transition	fT	VCE=- 10V, IC=-50mA,f=30MHZ	100			MHz
frequency

To.92 PackageoutlineDimensions

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