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SXJ-D2N1 Micro Photoelectric Sensor

3 year ago
141 0
Product details

  SXJ-D2N1  Built-in Amplifier Photoelectric Switch(Photosensor Sensor)

  PVP material is resistant to bending and has 1.5 times the tensile strength of ordinary materials, making it durable

  Compact size, suitable for a variety of narrow working spaces



Product Model

NPN

SXJ-T2N1

SXJ-T2N2

SXJ-D2N1

SXJ-D2N2

PNP

SXJ-T2P1

SXJ-T2P2

SXJ-D2P1

SXJ-D2P2

Sensing Distance

-

1.5m

150mm±5

Sensing Object

Opaque objects: 6mm min

-

Differential Travel

-

25% max of the Sensing Distance

Directional Angle

2 to 20°

-

Sensitivity Adjustment

-

Single-turn regulator

Light Source (Luminous Wavelength)

Infrared Emitting Diode

Power Supply Voltage

10.8 to 26.4V DC Pulse (P-P)±10% max

Current Consumption

20mA max

Response Time

1ms max.

Control Output

Load power supply voltage: 26.4V DC max

Load power supply voltage: 26.4V DC max

Load power current: 100mA max

Load power current: 80mA max

Residual voltage: 1V max

Residual voltage: 1V max

Ambient Illumination

Incandescent light: 300lx max; Sunlight: 10000lx max

Ambient Temperature

Operating: -25 to +55℃, Storage: -40 to +70℃(With no icing or condensation)

Ambient Humidity

Operating: 35 to 85%RH; Storage: 35 to 85%RH(With no condensation)

Insulating Resistance

20MΩ min(DC500V)

Voltage Withstand

AC1000V 50/60Hz 1min

Vibration

Durable

10-55Hz     1.5-mm dual amplitude for 2h each in X, Y, and Z directions

Shock

Durable

500m/s² for 3 times each in X, Y, and Z directions

Protective Structure

IEC-IP40

Protective Circuit

Power reverse connection protection

Accessories

Mounting bracket, Screw, Nuts


                                                                                                                                                                                                                                                                  

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