SCR S5560-12M TO3PA 20-50MA

3 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

S5560 55A SCRs

High voltage capacity 1200V S5560-12M 55A SCR

YZPST-S5560-12M

FEATURES
High thermal cycling performance
High voltage capacity
Very high current surge capability
APPLICATIONS
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control

Lighting and temperature control

TO-3P SCR

ABSOLUTE MAXIMUM RATINGS
Parameter		Symbol	Value	Unit
Storage junction temperature range		Tstg	-40 ~ 150	℃
Operating junction temperature range		Tj	-40~ 125	℃
Repetitive peak off-state voltage (T =25℃)		VDRM	1200/1600	V
Repetitive peak reverse voltage (T =25℃)		VRRM	1200/1600	V
Non repetitive surge peak Off-state voltage		VDSM	VDRM +100	V
Non repetitive peak reverse voltage		VRSM	VRRM +100	V
RMS on-state current	TO-3PIns.(TC=80℃)	IT(RMS)	55	A
	TO-247(TC=85℃)
Non repetitive surge peak on-state current		ITSM	550	A
Average on-state current (180° conduction angle)		IT(AV)	35	A
I2t value for fusing (tp= 10ms)		I2t	1500	A2 S
Critical rate of rise of on-state current		di/dt	150	A/μS
(I =2×IGT, tr ≤ 100 ns)
Peak gate current		IGM	5	A
Average gate power dissipation		PG(AV)	2	W

Thermal Resistances
Symbol	Parameter		Value	Unit
		TO-3P	0.65
Rth(j-c)	Junction to case (DC)	TO-247	0.6	℃/W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
Symbol	Test Condition		Value	Unit
IGT	V = 12V R = 140Ω	MAX.	60	mA
VGT	V = 12V R = 140Ω	MAX.	1.3	V
VGD	VD=VDRM Tj= 125℃	MIN.	0.2	V
IL	IG= 1.2IGT	MAX.	250	mA
IH	IT=50mA	MAX.	200	mA
dV/dt	VD=2/3VDRM Gate Open Tj=125℃	MIN.	1000	V/μs

STATIC CHARACTERISTICS
Symbol	Parameter		Value(MAX.)	Unit
VTM	ITM =80A tp=380μs	Tj =25℃	1.8	V
IDRM	VD=VDRM VR=VRRM	Tj =25℃	20	μA
IRRM	VD=VDRM VR=VRRM	Tj =125℃	8	mA

TO-3P Package Mechanical Data

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YANGZHOU POSITIONING TECH CO., LTD.

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8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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