High Voltage Diode SR10100
8 month ago
Plastic Schottky Barrier Rectifier Diode
YZPST-SR10100
Features
Metal silicon rectifie,majority carrier conduction ·Guard ring for transient protection
Low pwer loss,high effciency
High current capability low VF
High surge capacity
Plastic package has UL flammability classification 94 V-0
Mechanical Data
Cases:JEDEC R-6 molded plastic
Polarity:Color band cenotes cathode
Weight:0.07ounces 2.1 grams
Mounting position:Any
Maximum Ratings & Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistiver or inductive load.
For capactitive load, derate current by 20%
| Symbols | SR10100 | Unit | ||
| Maximum repetitive peak reverse voltage | VRRM | 100 | V | |
| Maximum RMS voltage | VR(RMS) | 70 | V | |
| Maximum DC blocking voltage | VDC | 100 | V | |
| IF(AV) | 10 | A | ||
| Maximum Average Forward Rectified Current | ||||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load | IFSM | 150 | A | |
| @IF =10A | ||||
| Maximum forward voltage | VF | 0.85 | V | |
| Maximum reverse current | @TA = 25℃ @TA = 100℃ | IR | 0.5 | mA |
| 50 | ||||
| Typical thermal resistance | RθJA | 3 | ℃//W | |
| Storage temperature range | TSTG | -205 | ℃ | |
| Junction temperature range at reduced reverse voltage in DC forward mode | Tj | -205 | ℃ | |
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Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier
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