TRIAC BT138-800E TO220

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

BT138 Series 12A Triacs

YZPST-BT138-800E

DESCRIPTION

With low holding and latching current, BT138

Series triacs are especially recommended for

use on middle and small resistance type power

load.

MAIN FEATURES:

symbol	value	unit
IT(RMS)	12	A
VDRM/VRRM	600/800	V
VTM	≤1.6	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	600/800	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	600/800	V
RMS on-state current	IT(RMS)	12	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	120	A
I2t value for fusing (tp=10ms)	I2t	45	A2s

Critical rate of rise of on-state current (IG=2 × IGT) Ⅰ- Ⅱ-Ⅲ 50

dI/dt Ⅳ 10 A/ μs

Peak gate current IGM 2 A

Average gate power dissipation PG(AV) 0.5 W

Peak gate power PGM 5 W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

3 Quadrants：

Parameter Value

Test Condition Quadrant SW CW BW Unit

IGT 10 35 50 mA

VGT VD=12V, RL=33Ω Ⅰ- Ⅱ-Ⅲ MAX 1.3 V

VGD VD=VDRM Tj=125℃ Ⅰ- Ⅱ-Ⅲ MIN 0.2 V

IH IT=100mA MAX 10 40 60 mA

Ⅰ-Ⅲ 30 50 70

IL IG=1.2IGT Ⅱ MAX 40 60 80 mA

VD=2/3VDRM Tj=125℃

dV/dt Gate open MIN 200 500 1000 V/ µs

4 Quadrants：

Parameter Value

Test Condition Quadrant D E F G Unit

Ⅰ- Ⅱ-Ⅲ 5 10 25 50

IGT Ⅳ 10 25 70 100 mA

VGT VD=12V, RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V

VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V

IH IT=100mA MAX 10 20 40 60 mA

PACKAGE MECHANICAL DATA

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YANGZHOU POSITIONING TECH CO., LTD.

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7 year

Main Product: Semiconductor Triac , Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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Critical rate of rise of on-state current (IG=2 × IGT)		Ⅰ- Ⅱ-Ⅲ	50
Critical rate of rise of on-state current (IG=2 × IGT)	dI/dt	Ⅳ	10	A/ μs
Peak gate current		IGM	2	A
Average gate power dissipation		PG(AV)	0.5	W
Peak gate power		PGM	5	W

Parameter				Value
Parameter	Test Condition	Quadrant		SW	CW	BW	Unit
IGT				10	35	50	mA
VGT	VD=12V, RL=33Ω	Ⅰ- Ⅱ-Ⅲ	MAX	1.3			V
VGD	VD=VDRM Tj=125℃	Ⅰ- Ⅱ-Ⅲ	MIN	0.2			V
IH	IT=100mA		MAX	10	40	60	mA
		Ⅰ-Ⅲ		30	50	70
IL	IG=1.2IGT	Ⅱ	MAX	40	60	80	mA
	VD=2/3VDRM Tj=125℃
dV/dt	Gate open		MIN	200	500	1000	V/ µs