IGBT Module GD450HFX170C6S

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

IGBT Module

YZPST-450HFX170C6S

1700V/450A 2 in one-package

General Description

IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

general inverters and UPS.

Features
Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175oC
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications

Inverter for motor drive

AC and DC servo drive amplifier

Uninterruptible power supply

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC= 100oC	706 450	A
ICM	Pulsed Collector Current tp=1ms	900	A
PD	Maximum Power Dissipation @ T =175oC	2542	W

Diode

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	450	A
IFM	Diode Maximum Forward Current tp=1ms	900	A

Module

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
		IC=450A,VGE=15V, Tj=25oC		1.85	2.2
		IC=450A,VGE=15V, Tj=25oC		1.85	2.2
VCE(sat)	Collector to Emitter	IC=450A,VGE=15V, Tj=125oC		2.25		V
	Saturation Voltage	IC=450A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC= 18.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off	VCE=VCES,VGE=0V,			5	mA
ICES	Current	Tj=25oC			5	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.67		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz,		54.2		nF
Cres	Reverse Transfer	VGE=0V		1.32		nF
Cres	Capacitance			1.32		nF
QG	Gate Charge	VGE=- 15…+15V		4.24		μC
td(on)	Turn-On Delay Time			179		ns
tr	Rise Time			105		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC		680		ns
tf	Fall Time			375		ns
Eon	Turn-On Switching			116		mJ
Eon	Loss			116		mJ
Eoff	Turn-Off Switching			113		mJ
Eoff	Loss			113		mJ
td(on)	Turn-On Delay Time			208		ns
tr	Rise Time			120		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC		784		ns
tf	Fall Time			613		ns
Eon	Turn-On Switching			152		mJ
Eon	Loss			152		mJ
Eoff	Turn-Off Switching			171		mJ
Eoff	Loss			171		mJ
td(on)	Turn-On Delay Time			208		ns
tr	Rise Time			120		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC		800		ns
tf	Fall Time			720		ns
Eon	Turn-On Switching			167		mJ
Eon	Loss			167		mJ
Eoff	Turn-Off Switching			179		mJ
Eoff	Loss			179		mJ
		tP≤10μs,VGE=15V,
ISC	SC Data	Tj=150oC,VCC= 1000V, VCEM≤1700V		1800		A

Diode Characteristics TC=25oC unless otherwise noted

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
	Diode Forward	IF=450A,VGE=0V,Tj=25oC		1.8	2.25
VF	Voltage	IF=450A,VGE=0V,Tj= 125oC		1.95		V
		IF=450A,VGE=0V,Tj= 150oC		1.9
Qr	Recovered Charge	VR=900V,IF=450A,		105		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj=25oC		198		A
IRM	Recovery Current			198		A
Erec	Reverse Recovery Energy			69		mJ
Qr	Recovered Charge	VR=900V,IF=450A,		187		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj= 125oC		578		A
IRM	Recovery Current			578		A
Erec	Reverse Recovery Energy			129		mJ
Qr	Recovered Charge	VR=900V,IF=450A,		209		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj= 150oC		585		A
IRM	Recovery Current			585		A
Erec	Reverse Recovery Energy			150		mJ

Package Dimensions

Package Dimensions

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