SCR S4050 TO220F
2 year agoP/N: YZPST-S4050 40A SCRs

ABSOLUTE MAXIMUM RATINGS |
|||
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40 ~ 150 |
℃ |
Operating junction temperature range |
Tj |
-40~ 125 |
℃ |
Repetitive peak off-state voltage |
VDRM |
1600 |
V |
Repetitive peak reverse voltage |
VRRM |
1600 |
V |
Non repetitive surge peak Off-state voltage |
VDSM |
VDRM +100 |
V |
Non repetitive peak reverse voltage |
VRSM |
VRRM +100 |
V |
Non repetitive surge peak on-state current |
ITSM |
420 |
A |
RMS on-state current (180° conduction angle) |
IT(RMS) |
40 |
A |
Average on-state current (180° conduction angle) |
IT(AV) |
25 |
A |
I2t value for fusing (tp= 10ms) |
I2t |
880 |
A2 S |
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) |
di/dt |
150 |
A/μS |
Peak gate current |
IGM |
4 |
A |
Peak gate power |
PGM |
5 |
W |
Thermal Resistances | ||||
Symbol | Parameter | Value | Unit | |
TO-220A | 1.2 | |||
Rth(j-c) | Junction to case (DC) | TO-220C | 0.8 | ℃/W |
TO-220F | 0.85 |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) |
||||
Symbol |
Test Condition |
|
Value |
Unit |
IGT |
V = 12V R = 140Ω |
MAX. |
50 |
mA |
VGT |
MAX. |
1.5 |
V |
|
VGD |
VD=VDRM Tj= 125℃ |
MIN. |
0.2 |
V |
IL |
IG= 1.2IGT |
MAX. |
200 |
mA |
IH |
IT=50mA |
MAX. |
100 |
mA |
dV/dt |
VD=2/3VDRM Gate Open Tj=125℃ |
MIN. |
1000 |
V/μs |
TO-220F Package Mechanical Data

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Silicon Transistor,
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