Schottky Bypass Diode Module MK5050

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

Bypass Diode Module For PV

P/N: YZPST-MK5050

REVERSE VOLTAGE:50 V

FORWARD CURRENT:50 A

FEATURES

Metal of silicon rectifier, majority carrier conduction

Guard ring for transient protection

Low power loss, high efficiency

High current capability, low IR

High surge capacity

High temperature reverse characteristic is excellent For use in photovoltaic solar cell protection

MECHANICAL DATA

Case: Molded plastic, MT09E

Epoxy: UL 94V-O rate flame retardant

Polarity: As marked

Mounting position: Any

Marking: MK5050

YZPST-MK5050

Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60HZ, resistive or inductive load.

For capacitive load, derate current by 20%.

			Symbols	MK5050	Units
Maximum Recurrent Peak Reverse Voltage			VRRM	50	V
Maximum RMS Voltage			VRMS	35	V
Maximum DC Blocking Voltage			VDC	50	V
Maximum Average Forward Rectified Current at TC = 125°C			I(AV)	50	A
Peak Forward Surge Current,
8.3ms single half-sine-wave			IFSM	400	A
superimposed on rated load (JEDEC method)
Maximum Forward	at IF = s0A, TC = 25°C at IF = s0A, TC =125°C		VF	0.55	V
Voltage (Note 1)				0.47
Maximum Reverse Current		at TJ=25℃	IR	0.5	mA
at Rated DC Blocking Voltage		TJ=100℃		500
Typical Thermal Resistance			RθJC	1.2	℃/W
Operating Junction Temperature Range			TOP	-55 to +150	℃
Junction Temperature in DC Forward Current Without Reverse Bias. T ≤ 1 hour (Note 3)			TJ	≤ 200℃	℃
Storage Temperature Range			Tstg	-55 to +150	℃

NOTES:

1- 300us Pulse Width, 2%Duty Cycle.

2- Thermal Resistance Junction to Case. Without Heatsink.

3- Meets The Requiements Of IEC 61215 ed. 2 Bypass Diode Thermal Test.

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YANGZHOU POSITIONING TECH CO., LTD.

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8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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