Silicon N-Channel Power MOSFET 7N90A0 TO263
2 year ago
100% Single Pulse avalanche energy Test
| Symbol | Parameter | Rating | Units |
| V DSS | Drain-to- Source Voltage | 900 | V |
| ID | Continuous Drain Current | 7 | A |
| Continuous Drain Current TC = 100 °C | 5 | A | |
| a1 | Pulsed Drain Current | 28 | A |
| IDM | |||
| VGS | Gate-to-Source Voltage | ±30 | V |
| a2 | Single Pulse Avalanche Energy | 700 | mJ |
| EAS | |||
| a1 | Avalanche Energy , Repetitive | 60 | mJ |
| EAR | |||
| a1 | Avalanche Current | 2.4 | A |
| IAR | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns |
| a3 | |||
| PD | Power Dissipation | 160 | W |
| Derating Factor above 25 °C | 1.28 | W/℃ | |
| TJ ，Tstg | Operating Junction and Storage | 150 ，– 55 to 150 | ℃ |
| Temperature Range | |||
| TL | MaximumTemperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc= 25℃ unless otherwise specified ）：
| OFF Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| V DSS | Drain to Source Breakdown | VGS =0V, I D =250µA | 900 | -- | -- | V |
| Voltage | ||||||
| ΔBVDSS/ ΔTJ | Bvdss Temperature Coefficient | ID=250uA, Reference25℃ | -- | 0.8 | -- | V/℃ |
| VDS = 900V, VGS = 0V, | -- | -- | 1 | |||
| IDSS | Drain to Source Leakage Current | Ta = 25℃ | µ A | |||
| VDS =720V, VGS = 0V, | -- | -- | 250 | |||
| Ta = 125℃ | ||||||
| IGSS( F) | Gate to Source Forward Leakage | VGS = +30V | -- | -- | 10 | µ A |
| IGSS(R ) | Gate to Source Reverse Leakage | VGS =- 30V | -- | -- | -10 | µ A |
| ON Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| RDS(ON) | Drain-to-Source On- Resistance | VGS =10V, I D =3.0A | -- | 1.4 | 1.8 | Ω |
| VGS(TH ) | Gate Threshold Voltage | VDS = VGS, I D = 250µA | 2.5 | -- | 4.5 | V |
| Pulse width tp ≤380µs,δ≤2% | ||||||
| Dynamic Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| gfs | Forward Transconductance | VDS = 15V, I D =3A | -- | 8 | -- | S |
| Ciss | Input Capacitance | -- | 1460 | -- | ||
| Coss | Output Capacitance | VGS = 0V VDS = 25V | -- | 130 | -- | pF |
| Crss | Reverse Transfer Capacitance | f = 1.0MHz | -- | 23 | -- | |
| Resistive Switching Characteristics | ||||||
| Symbol | Parameter | Test Conditions | Rating | Units | ||
| Min. | Typ. | Max. | ||||
| td(ON) | Turn-on Delay Time | -- | 22 | -- | ||
| tr | Rise Time | I D =7.0A V DD = 450V | -- | 45 | -- | |
| td(OFF ) | Turn-Off Delay Time | VGS = 10V RG = 9.1Ω | -- | 33 | -- | ns |
| tf | Fall Time | -- | 37 | -- | ||
| Qg | Total Gate Charge | -- | 37 | -- | ||
| Qgs | Gate to Source Charge | I D =7 . 0A V DD =450V | -- | 8 | -- | nC |
| Qgd | Gate to Drain (“ Miller ”)Charge | VGS = 10V | -- | 14 | -- | |
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Main Product:
Semiconductor Triac ,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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