TRIAC BT136S-600 TO252

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

P/N: YZPST-BT136 Series 4A Triacs

YZPST-BT136S-600

DESCRIPTION:

With low holding and latching current, BT136 Series triacs are especially recommended for use on middle and small resistance type power load.

YZPST-BT136 TO-220

MAIN FEATURES:

symbol	value	unit
IT(RMS)	4	A
VDRM/VRRM	600/800	V
VTM	≤1.7	V

ABSOLUTE MAXIMUM RATINGS:

Parameter		Symbol	Value	Unit
Storage junction temperature range		Tstg	-40~150	℃
Operating junction temperature range		Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)		VDRM	600/800	V
Repetitive peak reverse voltage (Tj=25℃)		VRRM	600/800	V
RMS on-state current		IT(RMS)	4	A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)		ITSM	25	A
I2t value for fusing (tp=10ms)		I2t	3.1	A2s
Critical rate of rise of on-state current (IG=2 × IGT)		Ⅰ- Ⅱ-Ⅲ	50
Critical rate of rise of on-state current (IG=2 × IGT)	dI/dt	Ⅳ	10	A/ μs

Peak gate current	IGM	2	A
Average gate power dissipation	PG(AV)	0.5	W
Peak gate power	PGM	5	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Parameter				Value
Parameter	Test Condition	Quadrant		T	D	E	Unit
		Ⅰ- Ⅱ-Ⅲ		5	5	10
IGT	VD=12V,	Ⅳ		5	10	25	mA
VGT	RL=33Ω	Ⅰ- Ⅱ-Ⅲ-Ⅳ	MAX	1.3			V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ-Ⅳ	MIN	0.2			V
IH	IT=100mA		MAX	5	10	20	mA
		Ⅰ-Ⅲ-Ⅳ		8	10	20
IL	IG=1.2IGT	Ⅱ	MAX	12	15	35	mA
	VD=0.66×VDRM Tj=125℃ Gate open
dV/dt	VD=0.66×VDRM Tj=125℃ Gate open		MIN	10	20	50	V/ µs

STATIC CHARACTERISTICS

Symbol	Test Condition			Value	Unit
VTM	ITM=5A tp=380μs	Tj=25℃	MAX	1.7	V
IDRM		Tj=25℃		5	µA
IRRM	VDRM= VRRM	Tj= 125℃	MAX	0.5	mA

THERMAL RESISTANCES

Symbol	Test Condition		Value	Unit
		TO-252-4R	2.8
Rth(j-c)	junction to case(AC)	TO-220B(Non-Ins)/ TO-220C	2.6	℃/W

PACKAGE MECHANICAL DATA

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YANGZHOU POSITIONING TECH CO., LTD.

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8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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