SCR MCR100-8 30-60UA TO92CU
2 year ago
MAIN FEATURES:
|
symbol |
value |
unit |
|
IT(RMS) |
1 |
A |
|
VDRM/VRRM |
600 |
V |
|
VTM |
≤1.5 |
V |
ABSOLUTE MAXIMUM RATINGS:
|
Parameter |
Symbol |
Value |
Unit |
|
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
|
Operating junction temperature range |
Tj |
-40~110 |
℃ |
|
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600 |
V |
|
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600 |
V |
|
RMS on-state current |
IT(RMS) |
0.8 |
A |
|
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
8 |
A |
|
I2t value for fusing (tp=10ms) |
I2t |
0.32 |
A2s |
|
Critical rate of rise of on-state current (IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
|
Peak gate current |
IGM |
0.2 |
A |
|
Average gate power dissipation |
PG(AV) |
0.1 |
W |
|
Peak gate power |
PGM |
0.5 |
W |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
|
Symbol |
Test Condition |
Value |
Unit |
||
|
MIN |
TYPE |
MAX |
|||
|
IGT |
VD=12V, RL=33Ω |
- |
20 |
200 |
µA |
|
VGT |
- |
0.6 |
0.8 |
V |
|
|
VGD |
VD=VDRM Tj=110℃ RL=3.3kΩ |
0.2 |
- |
- |
V |
|
IH |
IT=50mA |
- |
- |
5 |
mA |
|
IL |
IG=1.2IGT |
- |
- |
6 |
mA |
|
dV/dt |
VD=0.66×VDRM Tj=110℃ G open RGK=1KΩ |
10 |
- |
- |
V/ µs |
THERMAL RESISTANCES
| Symbol | Test Condition | Value | Unit | |
| SOT-223 | 31 | |||
| TO-92 | ||||
| (AC) | SOT-23-3L | 75 | ℃/W | |
| Rth(j-c) | SOT-89 | 45 | ||
PACKAGE MECHANICAL DATA
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor ,
Bridge Rectifier