YZPST-800DDM17

6 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

7 year

Product details

Dual Switch IGBT Module

P/N:YZPST-800DDM17

KEY PARAMETERS

VCES :1700V

VCE(sat)* (typ):2.7V

IC (max):800A

IC(PK) (max):1600V

FEATURES

● 10µs Short Circuit Withstand

● High Thermal Cycling Capability

● Non Punch Through Silicon

● Isolated AlSiC Base with AlN Substrates

● Lead Free construction

APPLICATIONS

● High Reliability Inverters

● Motor Controllers

● Traction Drives

The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.

The 800DDM17 is a dual switch 1700V, n-channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise

Symbol	Parameter	Test Conditions	Max.	Units
VCES	Collector-emitter voltage	VGE = 0V	1700	V
VGES	Gate-emitter voltage		±20	V
IC	Continuous collector current	Tcase = 75°C	800	A
IC(PK)	Peak collector current	1ms, Tcase = 110°C	1600	A
Pmax	Max. transistor power dissipation	Tcase = 25°C, Tj = 150°C	6940	W
I2t	Diode I2t value	VR = 0, tp = 10ms, Tj = 125ºC	120	kA2s
Visol	Isolation voltage – per module	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	4000	V
QPD	Partial discharge – per module	IEC1287, V1 = 1800V, V2 = 1300V, 50Hz RMS	10	pC

PACKAGE DETAILS

All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

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YANGZHOU POSITIONING TECH CO., LTD.

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7 year

Main Product: Semiconductor Triac, Semiconductor Thyristor , Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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