YZPST-MUR860G TO-220
11 month ago
|
ABSOLUTE MAXIMUM RATINGS |
|||
|
Parameter |
Symbol |
Value |
Unit |
|
Storage junction temperature range |
Tstg |
-40 ~ 150 |
℃ |
|
Operating junction temperature range |
Tj |
-40~ 125 |
℃ |
|
Repetitive peak off-state voltage (T =25℃) |
VDRM |
1200 |
V |
|
Repetitive peak reverse voltage (T =25℃) |
VRRM |
1200 |
V |
|
Non repetitive surge peak Off-state voltage |
VDSM |
VDRM +100 |
V |
|
Non repetitive peak reverse voltage |
VRSM |
VRRM +100 |
V |
|
RMS on-state current |
IT(RMS) |
30 |
A |
|
Non repetitive surge peak on-state current (180° conduction angle, F=50Hz) |
ITSM |
300 |
A |
|
Average on-state current (180° conduction angle) |
IT(AV) |
19 |
A |
|
I2t value for fusing (tp= 10ms) |
I2t |
450 |
A2 S |
|
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) |
dI/dt |
50 |
A/μS |
|
Peak gate current |
IGM |
4 |
A |
|
Average gate power dissipation |
PG(AV) |
1 |
W |
|
Thermal Resistances |
|||
|
Symbol |
Parameter |
Value |
Unit |
|
Rth(j-c) |
Junction to case |
0.80 |
℃/W |
|
Rth(j-a) |
junction to ambient |
60 |
|
|
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) |
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|
Symbol |
Test Condition |
|
Value |
Unit |
|
IGT |
VD = 12V |
MAX. |
25 |
mA |
|
VGT |
MAX. |
1.3 |
V |
|
|
VGD |
VD=VDRM Tj=125℃ |
MIN. |
0.2 |
V |
|
IL |
IG= 1.2IGT |
MAX. |
180 |
mA |
|
IH |
IT=500mA |
MAX. |
120 |
mA |
|
dV/dt |
VD=2/3VDRM Gate Open Tj=125℃ |
MIN. |
500 |
V/μs |
TO-220C Package Mechanical Data
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier