YZPST-SK200GD066T

2 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

8 year

Product details

IGBT Module

YZPST-SK200GD066T

Preliminary Data

Features

one screw mounting moduIe

FuIIy compatibIe with1,2,3

Improved thermaI performances by aIuminium oxide substrate

Trench IGBT technoIogy

CAL technoIogy FWD

Integrated NTC temperature sensor

Typical Applications*

Inverter up to 42 KVA

Typ. motor power 18,5 KW

Characteristics Ts = 25 oC, unIess otherwise specified
Symbol
Conditions
min. typ. max.
Units
IGBT
VGE(th)	VGE = VCE, IC = 3,2 mA		5 5,8 6,5		V
ICES	VGE = 0 V, VCE = VCES Tj = 25 oC		0,01		mA
	Tj = 125 oC				mA
IGES	VCE = 0 V, VGE = 20 V Tj = 25 oC		1200		nA
	Tj = 125 oC				nA
VCE0	Tj = 25 oC		0,6 1		V
	Tj = 150 oC		0,7 0,8		V
rCE	VGE = 15 V Tj = 25oC		2,75 4		mΩ mΩ
	Tj = 150oC		4,25 5,5
VCE(sat)	ICnom = 200 A, VGE = 15 V Tj = 25oCchipIev.		1,45	1,9	V
	Tj = 150oCchipIev.		1,7	2,15	V
Cies	VCE = 25, VGE = 0 V f = 1 MHz		12,2		nF
C			0,76		nF
oes			0,36		nF
C
res
td(on)	RGon = 16 Ω	VCC = 300V	144		ns ns mJ ns ns mJ
t r	di/dt = 1720 A/μs	IC= 200A	128
E		Tj = 150 oC	13,9
on		VGE= -7/+15 V	1040
			91
td(off)	RGoff = 16 Ω		12
tf	di/dt = 2575 A/μs
E
Rth(j-s)	per IGBT		0,45		K/W

Absolute Maximum Ratings Ts = 25 oC, unIess otherwise specified
Symbol
Conditions
Values
Units
IGBT
VCES	Tj = 25 oC		600	V
IC	Tj = 175 oC Ts = 25 oC		174	A
	Ts = 70 oC		131	A
ICRM	ICRM= 2 x ICnom		400	A
VGES			± 20	V
t	VCC = 360 V; VGE ≤ 20 V; Tj = 125 oC		6	μs
psc	VCES < 600 V
Inverse Diode
IF	Tj = 175 oC	T = 25 oC s	99	A
		T = 70 oC s	79	A
IFRM	IFRM= 2 x IFnom		120	A
Module
It(RMS)					A
Tvj			-40 ... +175	oC
Tstg			-40 ... +125	oC
VisoI	AC, 1 min.		2500	V

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YANGZHOU POSITIONING TECH CO., LTD.

Audited supplier

8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode , Silicon Transistor, Bridge Rectifier

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