IGBT YZPST-450HF120TK-G2

4 year ago

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8 year

Product details

IGBT Moudle YZPST-450HF120TK-G2

FEATURES

High short circuit capability, self limiting short circuit current
IGBT CHIP(Trench+ Field Stop technology)
VCE(sat) with positive temperature coefficient Fast switching, Low switching losses
Free wheeling diodes with fast and soft reverse recovery

APPLICATIONS

High frequency switching application
Welding converters
Motion/servo control
UPS systems

ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified

Symbol	Parameter	Test Conditions	Values	Unit
IGBT
VCES	Collector - Emitter Voltage	TVj=25°C	1200	V
VGES	Gate - Emitter Voltage		±20	V
IC	DC Collector Current	TC=25°C	675	A
IC	DC Collector Current	TC=80°C	450	A
ICM	Repetitive Peak Collector Current	tp=1ms	900	A
Ptot	Power Dissipation Per IGBT		2016	W
Diode
VRRM	Repetitive Reverse Voltage	TVj=25°C	1200	V
IF(AV)	Average Forward Current	TC=25°C	675	A
IF(AV)	Average Forward Current	TC=80°C	450	A
IFRM	Repetitive Peak Forward Current	tp=1ms	900	A

MODULE CHARACTERISTICS TC=25°C unless otherwise specified

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
TVj max	Max. Junction Temperature				175	°C
TVj op	Operating Temperature		-40		150	°C
Tstg	Storage Temperature		-40		125	°C
Visol	Insulation Test Voltage	AC, t=1min	3000			V
Torque	To-Sink	Recommended M6	3		5	N·m
Torque	To-Terminal	Recommended M6	2.5		5	N·m
Weight				340		g

CIRCUIT DIAGRAM

PACKAGE OUTLINE

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YANGZHOU POSITIONING TECH CO., LTD.

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8 year

Main Product: Semiconductor Triac, Semiconductor Thyristor , Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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