YZPST-RD3016-TO263
4 year ago
YZPST-ZP3016-RD3016-ZP30A1600V 30A Rectifier Diode
ABSOLUTE MAXIMUM RATINGS
|
Parameter |
Symbol |
Test Conditions |
Value |
Unit |
|
Storage junction temperature range |
Tstg |
|
-55 ~ 150 |
℃ |
|
Operating junction temperature range |
Tj |
|
-55~ 150 |
℃ |
|
Maximum Repetitive peak reverse voltage |
VRRM |
|
1600 |
V |
|
Maximum average forward current |
IF(AV) |
TC = 105 °C, 180° conduction half sine wave |
30 |
A |
|
Maximum peak one cycle non-repetitive surge current |
IFSM |
10 ms sine pulse, no voltage reapplied |
350 |
A |
|
I2t value for fusing (tp=10ms) |
I2t |
10 ms sine pulse, no voltage reapplied |
612 |
A2S |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
| Parameter | Symbol | Test Conditions | Value | Unit |
| Maximum forward voltage drop | VFM | IF=30 A | 1.2 | V |
| Maximum reverse leakage current | IRM | TJ = 25 °C | 5 | µA |
| VR = Rated VRRM | ||||
| TJ = 150 °C | 1 | mA | ||
| VR = Rated VRRM |
Thermal Resistances
| Symbol | Parameter | Value | Unit |
| Rth(j-a) | junction to ambient | 45 | ℃/W |
| Rth(j-c) | Junction to case | 0.9 |
Ordering Information Scheme
TO-263 Package Mechanical Data
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
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