YZPST-SP50N80FX
2 year ago
800V N-Channel Power MOSFET
YZPST-SP50N80FX
FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
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Device Ordering Marking Packing Information |
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Ordering Number |
Package |
Marking |
Packing |
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SP50N80FX |
SOT-227 |
SP50N80FX |
Tube |
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Absolute Maximum Ratings TC = 25ºC, unless otherwise noted |
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Parameter |
Symbol |
Value |
Unit |
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Drain-Source Voltage (VGS = 0V) |
VDSS |
800 |
V |
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Continuous Drain Current |
ID |
50 |
A |
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Pulsed Drain Current (note1) |
IDM |
200 |
A |
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Gate-Source Voltage |
VGSS |
±30 |
V |
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Single Pulse Avalanche Energy (note2) |
EAS |
4500 |
mJ |
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Repetitive Avalanche Energy (note1) |
EAR |
60 |
mJ |
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Power Dissipation (TC = 25ºC) |
PD |
690 |
W |
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Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55~+150 |
ºC |
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Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. |
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Thermal Resistance |
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Parameter |
Symbol |
Value |
Unit |
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Thermal Resistance, Junction-to-Case |
RthJC |
0.18 |
ºC/W |
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Thermal Resistance, Junction-to-Ambient |
RthJA |
40 |
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Specifications TJ = 25ºC, unless otherwise noted |
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Parameter |
Symbol |
Test Conditions |
Value |
Unit |
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Min. |
Typ. |
Max. |
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Static |
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Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
800 |
-- |
-- |
V |
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Zero Gate Voltage Drain Current |
IDSS |
VDS =800, VGS = 0V, TJ = 25ºC |
-- |
-- |
1.0 |
μA |
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Gate-Source Leakage |
IGSS |
VGS = ±30V |
-- |
-- |
±100 |
nA |
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Gate-Source Threshold Voltage |
VGS(th) |
IDS = 250µA |
2.5 |
-- |
4.5 |
V |
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Drain-Source On-Resistance (Note3) |
RDS(on) |
VGS = 10V, ID = 25A |
-- |
120 |
130 |
mΩ |
|
Dynamic |
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Input Capacitance |
Ciss |
VGS = 0V, VDS = 25V, f = 1.0MHz |
-- |
14600 |
-- |
pF |
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Output Capacitance |
Coss |
-- |
1300 |
-- |
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Reverse Transfer Capacitance |
Crss |
-- |
66 |
-- |
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Total Gate Charge |
Qg |
VDD =400V, ID =50A, VGS = 10V |
-- |
360 |
-- |
nC |
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Gate-Source Charge |
Qgs |
-- |
80 |
-- |
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Gate-Drain Charge |
Qgd |
-- |
120 |
-- |
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Turn-on Delay Time |
td(on) |
VDD = 400V, ID =50A, RG = 10 Ω |
-- |
110 |
-- |
ns |
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Turn-on Rise Time |
tr |
-- |
200 |
-- |
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Turn-off Delay Time |
td(off) |
-- |
160 |
-- |
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Turn-off Fall Time |
tf |
-- |
185 |
-- |
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Drain-Source Body Diode Characteristics |
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Continuous Body Diode Current |
IS |
TC = 25 ºC |
-- |
-- |
50 |
A |
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Pulsed Diode Forward Current |
ISM |
-- |
-- |
400 |
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Body Diode Voltage |
VSD |
TJ = 25ºC, ISD = 25A, VGS = 0V |
-- |
-- |
1.4 |
V |
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Reverse Recovery Time |
trr |
VGS = 0V,IS = 50A, diF/dt =100A /μs |
-- |
520 |
-- |
ns |
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Reverse Recovery Charge |
Qrr |
-- |
5.0 |
-- |
μC |
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Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier
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