AMPLEON RF LDM0S
2 month ago
Key Specifications
- Frequency Range：3300 MHz ~ 3800 MHz
- Drain Supply Voltage (VDS)：28 V (Typ.)
- Output Power：8 W (1‑carrier LTE 20MHz, PAR=7.6dB)
- Power Gain：28 dB (Typ.)
- Drain Efficiency：40 % (Typ.)
- Package：PQFN‑12x7‑36‑1 (36‑lead, leadless SMT)
- Input/Output Impedance：50 Ω / 25 Ω (integrated pre‑match)
- Biasing：Independent carrier/peaking bias; integrated gate switch
- Features：High linearity, wide instantaneous bandwidth, ESD protection, DPD‑compatible
Key Features
- Fully integrated Doherty: includes input splitter, output combiner, carrier/peaking devices, and pre‑match—minimizes external components；
- 3‑stage + dual‑section design delivers high gain and linearity for 5G NR high‑PAR signals；
- Independent bias control for efficiency/linearity optimization; integrated gate switch enables power‑saving modes；
- PQFN package offers excellent thermal performance and small footprint, ideal for high‑density mMIMO and active antennas。
Typical Applications
- 5G macro base station AAU/RRU driver amplifier；
- 5G small cell/pico cell final/driver stage；
- 5G mMIMO active antenna units；
- 3.5GHz broadband communication transmitters。
Part Number Definition
- B11：5G 3.3–5.0GHz LDMOS MMIC family
- G：3.3–3.8GHz frequency band
- 3338：3300–3800MHz range
- N：Doherty configuration
- 81D：8W power rating, 3‑stage, D‑version
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Main Product:
High-Q capacitor,
High-frequency tube,
RF transistor,
RF switch,
IC ,
RF module