Aluminum Nitride Ceramic Molybdenum Manganese Metalized Substrate
2 year ago
AlN Ceramic Mo-Mn Metalized Substrate: Uncompromising Reliability for High-Power & RF Electronics
Puwei's AlN Ceramic Mo-Mn Metalized Substrate represents the pinnacle of reliability in high-performance electronics packaging. Engineered by fusing high-purity Aluminum Nitride (Thermal Conductivity: 170-200 W/m·K) with a robust Molybdenum-Manganese (Mo-Mn) metallization layer, this substrate delivers unmatched thermal management, superior electrical insulation, and exceptional mechanical stability. It is the cornerstone for next-generation high-power microelectronic components, RF circuits, and demanding microelectronics packaging applications where failure is not an option, particularly in automotive, aerospace, and defense systems.
Precision-engineered AlN substrate with Mo-Mn metallization, ready for high-reliability assembly.
Core Value Proposition for B2B Buyers & Design Engineers
- Solve Overheating & Enable Miniaturization: Exceptional thermal conductivity (170-200 W/m·K) actively draws heat away from dense power devices, allowing for higher power density and more compact designs without compromising reliability in electric vehicle inverters and industrial drives.
- Eliminate Delamination Risk: The fired Mo-Mn layer creates a chemical bond with the AlN, achieving adhesion strength >70 MPa. This ensures long-term integrity under extreme thermal cycling, a critical factor for automotive and aerospace sensor packaging applications.
- Ensure Signal Integrity in RF Designs: With stable dielectric properties (εr 8.5-9.0) and low loss, this substrate is an ideal insulation element for microwave applications and high-frequency modules, preserving signal purity in 5G/6G infrastructure.
- Reduce System-Level Thermal Stress: The CTE (4.5 ppm/°C) closely matches semiconductor materials like Si and GaAs, minimizing stress on bonded dies in integrated circuit packages and increasing overall module lifespan.
- Future-Proof Your Product with Proven Tech: Mo-Mn metallization offers superior oxidation resistance and durability in harsh environments compared to many thin-film alternatives, ensuring product longevity and reducing field failure rates in mission-critical systems.
Technical Specifications & Material Properties
AlN Ceramic Base Properties
The foundation is high-purity Aluminum Nitride (氮化铝陶瓷基板). Key properties include:
- Thermal Conductivity: 170 to 200 W/(m·K) – ideal for High power microelectronic components
- Coefficient of Thermal Expansion: 4.5 × 10⁻⁶/°C (matched to silicon)
- Dielectric Constant: 8.5 to 9.0 at 1 MHz
- Volume Resistivity: >10¹⁴ Ω·cm
- Breakdown Voltage: >15 kV/mm
- Flexural Strength: >300 MPa
Mo-Mn Metallization Layer Properties
The metallization is a fired Molybdenum-Manganese alloy offering robust performance for Thick film hybrid microcircuits:
- Typical Thickness: 10 to 25 μm (post-firing)
- Adhesion Strength: >70 MPa in standard pull tests
- Surface Finish: Outstanding solderability for direct brazing; can be plated with Ni or Au for enhanced wire bonding
- Operating Temperature Range: -55°C to +850°C
- Pattern Resolution: Capable of fine-line definition for complex circuit layouts
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