Silicon Nitride AMB Substrate for Silicon Carbide Modules
9 month ago
Si3N4 AMB Copper-clad Substrate For SiC Modules
Product Overview
Puwei Ceramic's Si3N4 AMB Copper-clad Substrate represents the cutting-edge solution for next-generation silicon carbide power modules. Engineered specifically for the demanding requirements of high-power electronics, this advanced substrate combines the exceptional mechanical properties of silicon nitride ceramic with the superior thermal and electrical performance of Active Metal Brazing technology.
Core Performance Advantages
- Optimal CTE Matching: Closely matches SiC semiconductor thermal expansion (3.2 vs 3.7 ppm/°C)
- Exceptional Thermal Shock Resistance: Withstands extreme temperature cycling in demanding applications
- Superior Mechanical Strength: 3-5x stronger than traditional alumina substrates
- Enhanced Current Carrying Capacity: Advanced AMB technology supports higher power density
- High Reliability Bonding: Stronger metallurgical bonds than conventional DBC methods
The silicon nitride ceramics selected for our Si3N4-AMB substrate feature a coefficient of thermal expansion that precisely matches SiC requirements, making them ideal for high-pressure, high-temperature, and high-frequency application environments. This compatibility makes our substrates perfectly suited for various SiC power module structures including HPD (High Power Density), DCM (Dual-Channel Memory), and T-PAK configurations in advanced Electronic Packaging.
Product Visual Documentation
High-performance Si3N4 AMB substrate optimized for SiC power applications
Comprehensive technical performance comparison showing silicon nitride advantages
Technical Specifications
Material Properties
- Base Material: High-purity Silicon Nitride (Si3N4) Ceramic
- Cladding Material: Oxygen-free high conductivity copper
- Thermal Conductivity: 80-90 W/m·K optimal for SiC applications
- Thermal Expansion Coefficient: 3.2 ppm/°C (matches SiC chips)
- Flexural Strength: >800 MPa for exceptional mechanical durability
- Dielectric Strength: >15 kV/mm for reliable electrical isolation
- Peel Strength: >80 N/cm for robust copper-ceramic bonding
Performance Advantages vs Traditional Substrates
- Thermal Shock Resistance: Significantly superior to aluminum oxide DBC substrates
- Toughness Strength: Enhanced fracture resistance compared to alumina ceramics
- Current Carrying Capacity: Improved performance over traditional DBC substrates
- Bonding Strength: Advanced AMB technology provides superior adhesion
- Thermal Cycling Performance: Excellent stability under repeated temperature changes
Product Features & Advantages
Optimal CTE Matching with SiC Semiconductors
The thermal expansion coefficient of our silicon nitride ceramics (3.2 ppm/°C) closely matches that of SiC semiconductors (3.7 ppm/°C), minimizing thermal stress at critical interfaces. This compatibility extends product lifetime and enhances reliability in high-power Integrated Circuits and advanced Microelectronics Packaging applications.
Superior Thermal Shock Resistance
Our Si3N4-AMB substrate clearly outperforms traditional aluminum oxide DBC substrates in thermal shock resistance and toughness strength. The unique microstructure of silicon nitride prevents crack propagation under rapid temperature changes, making it ideal for harsh thermal environments in Power Devices and automotive applications.
Advanced AMB Manufacturing Technology
The AMB substrate manufacturing process represents a significant improvement over traditional DBC methods. Compared to conventional DBC substrates, our AMB substrates offer substantial advantages in current carrying capacity, bonding strength, and long-term reliability for demanding High-Power Microelectronic Components.
Exceptional Mechanical Durability
With flexural strength exceeding 800 MPa, our silicon nitride substrates provide 3-5x greater mechanical robustness compared to alumina substrates. This superior strength withstands mechanical stress, vibration, and thermal cycling in the most demanding applications, ensuring reliable performance in challenging operating conditions.
The "SiC + AMB" Technology Advantage
As electric vehicles become the largest terminal market for AMB ceramic substrates, the industry is rapidly adopting the "SiC + AMB" technological route. To address range anxiety in new energy vehicles, the penetration rate of 800V high-voltage architecture is increasing, making our Si₃N4-AMB substrate the preferred packaging solution for automotive electric drive, rail transit inversion, wind-solar-storage, and hydrogen energy applications.
Implementation and Integration Guidelines
- Application Requirements Analysis
Evaluate your specific power module requirements, including thermal management needs, mechanical stress factors, and electrical performance specifications for optimal Electronic Packaging design.
- Thermal and Mechanical Simulation
Utilize material property data for comprehensive performance modeling, ensuring the substrate meets your thermal management and mechanical reliability requirements.
- Substrate Design and Customization
Provide your circuit layout and specifications, leveraging our expertise in Metallized Ceramics to create optimized substrate designs for your SiC modules.
- Prototype Fabrication and Testing
Manufacture validation samples for rigorous thermal cycling, power cycling, and mechanical stress testing under simulated operating conditions.
- Assembly Process Optimization
Adapt your assembly processes to leverage the unique characteristics of silicon nitride AMB substrates, ensuring proper thermal management and mechanical integrity.
- Comprehensive Quality Validation
Perform thorough electrical, thermal, and mechanical testing to validate performance meets industry standards and application-specific requirements.
- Volume Production Scaling
Transition to mass production with our robust quality assurance systems and manufacturing expertise, ensuring consistent, reliable performance across all units.
Application Scenarios
Electric Vehicle Power Systems
As the largest terminal market for AMB ceramic substrates, electric vehicles benefit from our Si3N4 substrates in traction inverters, onboard chargers, and DC-DC converters. The 800V high-voltage architecture in new energy vehicles particularly benefits from the "SiC + AMB" technological route for enhanced performance and reliability.
Rail Transportation Systems
Power conversion and control systems in high-speed trains and rail infrastructure where reliability under vibration, mechanical stress, and temperature extremes is paramount for safety and operational efficiency.
Renewable Energy Infrastructure
Wind-solar-storage integration systems and hydrogen energy applications requiring robust thermal management, excellent thermal shock resistance, and long-term reliability in outdoor environments with wide temperature variations.
Industrial Power Electronics
High-power motor drives, industrial automation equipment, and power conversion systems demanding exceptional mechanical strength, thermal cycling performance, and reliability in harsh industrial environments.
Advanced Power Semiconductors
Next-generation SiC power modules including HPD, DCM, and T-PAK configurations where thermal management, CTE matching, and mechanical robustness are critical for performance and longevity in High-Frequency Modules.
Customer Benefits and Value Proposition
- Enhanced System Reliability: Reduced field failures through superior thermal shock resistance and mechanical durability
- Improved Power Density: Enable higher power designs with excellent thermal management capabilities
- Extended Product Lifetime: Optimal CTE matching with SiC reduces thermal stress and extends operational life
- Competitive Performance Advantage: Stay ahead with cutting-edge "SiC + AMB" technology
- Reduced Total Cost of Ownership: Lower failure rates and extended service life offset initial investment
- Technical Partnership: Access Puwei's expertise in advanced Electronic Ceramic Products and application engineering
Production Process and Quality Assurance
- Raw Material Selection
Careful selection of high-purity silicon nitride powder with verified thermal and mechanical properties for consistent performance in demanding applications.
- Ceramic Formation
Precision forming of ceramic green bodies using advanced techniques to achieve optimal density and microstructure for enhanced mechanical properties.
- High-Temperature Sintering
Controlled sintering process to develop the optimal ceramic microstructure for strength, thermal conductivity, and thermal shock resistance.
- Precision Surface Preparation
Grinding and polishing to achieve exact thickness, flatness, and surface quality specifications for optimal bonding performance.
- Active Metal Brazing
Advanced AMB process using reactive braze alloys to create strong metallurgical bonds between silicon nitride ceramic and copper layers.
- Circuit Pattern Definition
Precise photolithography and etching for complex copper circuit patterns with fine feature resolution and optimal current paths.
- Surface Finishing
Application of protective and solderable finishes to ensure reliable assembly processes and long-term performance stability.
- Comprehensive Quality Testing
Rigorous inspection and performance testing to verify thermal, electrical, and mechanical properties meet specifications.
- Secure Packaging and Delivery
Careful packaging to prevent damage during shipping and ensure product integrity upon arrival at your facility.
Quality Certifications and Compliance
Puwei Ceramic maintains the highest quality standards through comprehensive international certifications ensuring reliable, professional-grade components for global markets:
- ISO 9001:2015 Quality Management System Certification
- IATF 16949:2016 Automotive Quality Management Standard
- RoHS Compliance for environmental safety
- REACH Certification for chemical substance management
- UL Recognition for safety standards
- Industry-specific quality certifications for power electronics applications
Customization Options and OEM/ODM Services
We offer comprehensive customization services to meet your specific SiC module requirements and application challenges in advanced power electronics and Microelectronics Packaging.
Comprehensive Ceramic Solutions
As specialists in advanced ceramic materials, we offer a complete range of solutions including alumina ceramics, aluminum nitride ceramics, silicon carbide ceramics, silicon nitride ceramics, and ceramic metallization materials. Whether you need high temperature stability, increased stiffness, anti-corrosion barriers, or low thermal expansion rates, our expertise in Metallized Ceramics enables us to provide innovative solutions that deliver significant performance and cost advantages for your specific requirements.
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