200V N-Channel MOSFET SPTF20R10

3 month ago

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Guangdong Kinwill Electronic Co., Ltd

4 month

Product details

200V N-Channel MOSFET

Power MOSFET -- SPTF20R10

General Features

 Proprietary New Trench Technology

 RDS(ON),typ.=9.3mΩ@VGS=10V

 Low Gate Charge Minimize Switching Loss

 Fast Recovery Body Diode

Applications

 DC/DC Converter

 Ideal for high-frequency switching and synchronous rectification

Absolute Maximum Ratings

Symbol	Parameter	Limit	Unit
VDSS	Drain-to-Source Voltage[1]	200	V
VGSS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current	110	A
ID	Continuous Drain Current @ Tc=100℃	75
IDM	Pulsed Drain Current at VGS=10V[2]	440
EAS	Single Pulse Avalanche Energy L=10mH	2000	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
PD	Power Dissipation	278	W
PD	Derating Factor above 25℃	2.22	W/℃
TL TPAK	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds	300 260	℃
TJ& TSTG	Operating and Storage Temperature Range	-55 to 150	℃

A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor device and belongs to the category of electronic components, regulates current flow between its Source and Drain terminals by applying a voltage to the Gate terminal.

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Guangdong Kinwill Electronic Co., Ltd

Audited supplier

4 month

Main Product: Semiconductor Device, Electronic Components, Power Inverter, Wires and Cables, IGBT Module, Power MOSFET

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