300V N-Channel Power MOSFET PTW50N30

3 month ago

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Guangdong Kinwill Electronic Co., Ltd

4 month

Product details

300V N-Channel MOSFET

Power MOSFET For UPS -- PTW50N30

General Features

 Proprietary New Planar Technology

 RDS(ON),typ.=68mΩ@VGS=10V

 Low Gate Charge Minimize Switching Loss

 Body Diode with Fast Recovery Characteristics

Applications

 DC-DC Converters

 DC-AC Inverters for UPS

 SMPS and Motor controls

Absolute Maximum Ratings

Symbol	Parameter	PTW50N30	Unit
VDSS	Drain-to-Source Voltage[ 1]	300	V
VGSS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current	50	A
ID @ Tc =100℃	Continuous Drain Current @ Tc= 100℃	31
IDM	Pulsed Drain Current at VGS= 10V[2]	200
EAS	Single Pulse Avalanche Energy	3044	mJ
dv/dt	Peak Diode Recovery dv/dt[3]	5.0	V/ns
PD	Power Dissipation	305	W
PD	Derating Factor above 25℃	2.50	W/℃
TL TPAK	Maximum Temperature for Soldering Leads at 0.063in ( 1.6mm) from Case for 10 seconds, Package Body for 10 seconds	300 260	℃
TJ& TSTG	Operating and Storage Temperature Range	-55 to 150	℃

* The MOSFET, a Metal-Oxide-Semiconductor Field-Effect Transistor, is classified as a voltage-controlled semiconductor device within the broader category of electronic components, regulates current flow between its Source and Drain terminals by applying a voltage to the Gate terminal. MOSFETs are extensively used in modern electronics, including Power Management,Power Amplification & Switching, etc.

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Guangdong Kinwill Electronic Co., Ltd

Audited supplier

4 month

Main Product: Semiconductor Device, Electronic Components, Power Inverter , Wires and Cables, IGBT Module, Power MOSFET

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