N-channel 650V 7A Power MOSFET LND7N65D

3 month ago

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Guangdong Kinwill Electronic Co., Ltd

4 month

Product details

Semiconductor Discrete Devices

650V 7A N-Channel MOSFET - LND7N65D

Product Summary

VDSS : 650V

ID : 7A

RDS(on),max : 1.4Ω

Qg,typ : 23.5nC

Description

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance, superior switching performance and high avalanche energy.

Features

 Low RDS(on)

 Low gate charge (typ. Qg =23.5nC)

 100% UIS tested

 RoHS compliant

Applications

 Power factor correction.

 Switched mode power supplies.

 LED driver.

 Uninterruptible power supply(UPS )

Absolute Maximum Ratings
Parameter		Symbol	Value	Unit
Drain-Source Voltage		VDSS	650	V
Continuous drain current 1)	( TC = 25°C ) ( TC = 100°C )	ID	7 4.4	A A
Pulsed drain current 2)		IDM	28	A
Gate-Source voltage		VGSS	±30	V
Avalanche energy, single pulse 3)		EAS	361	mJ
Power Dissipation		PD	40	W
Operating and Storage Temperature Range		TJ , TSTG	-55 to +150	°C
Continuous diode forward current		IS	7	A
Diode pulse current		IS,pulse	28	A

Notes:

1. Drain current limited by maximum junction temperature, TO-220 equivalent.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. IAS=8.5A, L=10mH, VDD=60V, Starting Tj= 25°C.

*A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor device and belongs to the category of electronic components, regulates current flow between its Source and Drain terminals by applying a voltage to the Gate terminal. Its core structure consists of a metal gate, an insulating oxide layer (typically SiO₂), and a semiconductor channel. Key features include high input impedance, low drive power, and fast switching speeds.

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Guangdong Kinwill Electronic Co., Ltd

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4 month

Main Product: Semiconductor Device, Electronic Components, Power Inverter, Wires and Cables, IGBT Module , Power MOSFET

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