High Voltage N-channel Power MOSFET LNA20N50W
3 month ago
Absolute Maximum Ratings | |||
Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
500 |
V |
Continuous drain current ( TC = 25°C ) ( TC = 100°C ) |
ID |
22 14 |
A A |
Pulsed drain current 1) |
IDM |
88 |
A |
Gate-Source voltage |
VGSS |
±30 |
V |
Avalanche energy, single pulse 2) |
EAS |
1201 |
mJ |
Power Dissipation ( TC = 25°C ) |
PD |
321 |
W |
Operating junction and storage temperature range |
TJ, TSTG |
-55 to +150 |
°C |
Continuous diode forward current |
IS |
22 |
A |
Diode pulse current |
IS,pulse |
88 |
A |
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