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High Voltage N-channel Power MOSFET LNA20N50W

3 month ago
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Product details
Power Semiconductor Device
High Voltage N-channel Power MOSFET LNA20N50W
 
Description
This Power MOSFET utilizes advanced planar VDMOS fabrication technology, delivering low on-resistance, enhanced switching efficiency, and high avalanche ruggedness.
 
Features
Ultra-Low On-Resistance (RDS(on))
Low gate charge (typ. Qg= 58 nC)
100% UIS tested
RoHS compliant
 
Applications
Power factor correction
High-Efficiency Switch-Mode Power Supplies (SMPS)
LNA20N50W

 

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

500

V

Continuous drain current        

 ( TC  = 25°C )

( TC = 100°C )

ID

 

22

14

 

A

A

Pulsed drain current 1)

IDM

88

A

Gate-Source voltage

VGSS

±30

V

Avalanche energy, single pulse 2)

EAS

1201

mJ

Power Dissipation ( TC  = 25°C )

PD

321

W

Operating junction and storage temperature range

TJ, TSTG

-55 to +150

°C

Continuous diode forward current

IS

22

A

Diode pulse current

IS,pulse

88

A


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