650V 20A IGBT Transistor DXG20N65PS

3 month ago

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Guangdong Kinwill Electronic Co., Ltd

4 month

Product details

Semiconductor Discrete Devices -- IGBT Transistors

Key Specifications

 650V/20A rating with typical VCE(sat) of 1.70V at 20A current

 Utilizes advanced Field Stop IGBT technology

 Supports short-circuit withstand time of 10 microseconds

 Features a square Reverse Bias Safe Operating Area (RBSOA)

 Positive VCE (on) Temperature Coefficient.

Advantages

 High Efficiency for Motor Control.

 Rugged Performance.

 Excellent Current Sharing in Parallel Operation

*A Discrete IGBT (Insulated Gate Bipolar Transistor Single Tube) is a separately packaged semiconductor power switching device, belongs to the category of electronic components. It integrates an IGBT structure (typically with an anti-parallel freewheeling diode) on a single chip, housed in a standard discrete package (e.g., TO-247, TO-220) with three terminals (Gate, Collector, Emitter). Its core function is to act as a high-voltage, high-current, high-speed electronic switch, controlled by the gate voltage.

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Guangdong Kinwill Electronic Co., Ltd

Audited supplier

4 month

Main Product: Semiconductor Device , Electronic Components, Power Inverter, Wires and Cables, IGBT Module, Power MOSFET

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